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二维碲化钼异质相同质结的最新进展

Recent Progress in Two-Dimensional MoTe Hetero-Phase Homojunctions.

作者信息

Guo Jing, Liu Kai

机构信息

State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.

出版信息

Nanomaterials (Basel). 2021 Dec 30;12(1):110. doi: 10.3390/nano12010110.

DOI:10.3390/nano12010110
PMID:35010060
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8746702/
Abstract

With the demand for low contact resistance and a clean interface in high-performance field-effect transistors, two-dimensional (2D) hetero-phase homojunctions, which comprise a semiconducting phase of a material as the channel and a metallic phase of the material as electrodes, have attracted growing attention in recent years. In particular, MoTe exhibits intriguing properties and its phase is easily altered from semiconducting 2H to metallic 1T' and vice versa, owing to the extremely small energy barrier between these two phases. MoTe thus finds potential applications in electronics as a representative 2D material with multiple phases. In this review, we briefly summarize recent progress in 2D MoTe hetero-phase homojunctions. We first introduce the properties of the diverse phases of MoTe, demonstrate the approaches to the construction of 2D MoTe hetero-phase homojunctions, and then show the applications of the homojunctions. Lastly, we discuss the prospects and challenges in this research field.

摘要

随着高性能场效应晶体管对低接触电阻和清洁界面的需求,由材料的半导体相作为沟道和材料的金属相作为电极组成的二维(2D)异相同质结近年来受到越来越多的关注。特别是,MoTe表现出有趣的特性,由于这两个相之间的能垒极小,其相很容易从半导体2H相转变为金属1T'相,反之亦然。因此,MoTe作为一种具有多相的代表性二维材料在电子学领域具有潜在应用。在这篇综述中,我们简要总结了二维MoTe异相同质结的最新进展。我们首先介绍MoTe不同相的性质,展示构建二维MoTe异相同质结的方法,然后介绍同质结的应用。最后,我们讨论了该研究领域的前景和挑战。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9469/8746702/f31a76bc5550/nanomaterials-12-00110-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9469/8746702/b6a14c5978fb/nanomaterials-12-00110-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9469/8746702/7ac5aa1dad2f/nanomaterials-12-00110-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9469/8746702/9b82fb0e1370/nanomaterials-12-00110-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9469/8746702/8a2d03a8cfb9/nanomaterials-12-00110-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9469/8746702/f31a76bc5550/nanomaterials-12-00110-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9469/8746702/b6a14c5978fb/nanomaterials-12-00110-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9469/8746702/7ac5aa1dad2f/nanomaterials-12-00110-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9469/8746702/9b82fb0e1370/nanomaterials-12-00110-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9469/8746702/8a2d03a8cfb9/nanomaterials-12-00110-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9469/8746702/f31a76bc5550/nanomaterials-12-00110-g005.jpg

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本文引用的文献

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Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe.二维范德华半导体 2H MoTe。的大面积单晶薄膜的外延种子生长。
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