State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China.
Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.
Science. 2021 Apr 9;372(6538):195-200. doi: 10.1126/science.abf5825.
The integration of two-dimensional (2D) van der Waals semiconductors into silicon electronics technology will require the production of large-scale, uniform, and highly crystalline films. We report a route for synthesizing wafer-scale single-crystalline 2H molybdenum ditelluride (MoTe) semiconductors on an amorphous insulating substrate. In-plane 2D-epitaxy growth by tellurizing was triggered from a deliberately implanted single seed crystal. The resulting single-crystalline film completely covered a 2.5-centimeter wafer with excellent uniformity. The 2H MoTe 2D single-crystalline film can use itself as a template for further rapid epitaxy in a vertical manner. Transistor arrays fabricated with the as-prepared 2H MoTe single crystals exhibited high electrical performance, with excellent uniformity and 100% device yield.
将二维（2D）范德华半导体集成到硅电子技术中，需要生产大规模、均匀且高结晶度的薄膜。我们报告了一种在非晶绝缘衬底上合成晶圆级单晶 2H 二碲化钼（MoTe）半导体的方法。通过碲化作用触发了平面内 2D-外延生长，从故意植入的单个种子晶体开始。所得单晶薄膜完全覆盖了 2.5 厘米的晶圆，具有极好的均匀性。2H MoTe 2D 单晶薄膜可以自身作为模板，以垂直方式进一步快速外延生长。用所制备的 2H MoTe 单晶制造的晶体管阵列表现出优异的电学性能，具有出色的均匀性和 100%的器件合格率。
