Jiang Xingan, Wang Xueyun, Wang Xiaolei, Zhang Xiangping, Niu Ruirui, Deng Jianming, Xu Sheng, Lun Yingzhuo, Liu Yanyu, Xia Tianlong, Lu Jianming, Hong Jiawang
School of Aerospace Engineering, Beijing Institute of Technology, 100081, Beijing, China.
College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, 100124, Beijing, China.
Nat Commun. 2022 Jan 31;13(1):574. doi: 10.1038/s41467-022-28235-6.
Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInPS as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.
开发具有连续可调特性的单相自整流忆阻器在结构上是理想的，并且在功能上能适应动态环境刺激变化，这是进一步发展智能忆阻器和神经形态计算所追求的。在此，我们报道了一种范德华铁电体CuInPS作为单个忆阻器，它对不同的偏置刺激（扫描速度、方向、幅度等）和外部机械负载具有出色的电流连续调制和自整流特性。可控的铜离子迁移和界面肖特基势垒的协同作用被认为可以动态控制电流流动和器件性能。这些出色的敏感特性使得这种材料有可能成为未来具有双向操作模式且对输入故障和变化有强识别能力的智能忆阻器的优异候选材料。
