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具有12配位5f族金属中心的金属有机框架材料。

MOFs with 12-Coordinate 5f-Block Metal Centers.

作者信息

Lv Kai, Urbank Christian, Patzschke Michael, März Juliane, Kaden Peter, Weiss Stephan, Schmidt Moritz

机构信息

Radiochemistry Lab, Institute of Nuclear Physics and Chemistry (INPC), China Academy of Engineering Physics (CAEP), 621900 Mianyang, Sichuan, China.

Institute of Resource Ecology, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraβe 400, 01328 Dresden, Germany.

出版信息

J Am Chem Soc. 2022 Feb 23;144(7):2879-2884. doi: 10.1021/jacs.1c13127. Epub 2022 Feb 10.

Abstract

We have constructed an unprecedented MOF platform that accommodates a range of 5f-block metal ions (Th, U, Np, Pu) as the primary building block. The isoreticular actinide metal-organic frameworks (An-MOFs) exhibit periodic trends in the 12-coordinate metal environment, ligand configuration, and resulting ultramicroporosity. It holds potential in distinguishing neighboring tetravalent actinides. The metal ionic radius, carboxylate bite angle, anthracene plane twisting, interligand interactions, and countercation templating collectively determine an interplay between solvation, modulation, and complexation, resulting in a coordination saturation of the central actinide, while lanthanide counterparts are stabilized by the formation of a dimer-based motif. Quantum chemical calculations indicate that this large coordination number is only feasible in the high-symmetry environment provided by the An-MOFs. This category of MOFs not only demonstrates autoluminescence (4.16 × 10 counts per second per gram) but also portends a wide-bandgap (2.84 eV) semiconducting property with implications for a multitude of applications such as hard radiation detection.

摘要

我们构建了一个前所未有的金属有机框架(MOF)平台,该平台容纳一系列5f族金属离子(钍、铀、镎、钚)作为主要结构单元。等规系锕系金属有机框架(An-MOFs)在12配位金属环境、配体构型以及由此产生的超微孔性方面呈现出周期性趋势。它在区分相邻四价锕系元素方面具有潜力。金属离子半径、羧酸盐咬角、蒽平面扭曲、配体间相互作用以及抗衡阳离子模板共同决定了溶剂化、调制和络合之间的相互作用,导致中心锕系元素的配位饱和,而镧系元素对应物则通过形成基于二聚体的基序而稳定。量子化学计算表明,这种高配位数仅在An-MOFs提供的高对称环境中可行。这类MOF不仅表现出自发光(每秒每克4.16×10次计数),还预示着具有宽带隙(2.84 eV)的半导体特性,这对诸如硬辐射检测等多种应用具有重要意义。

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