Alhoshany Abdulaziz
Department of Electrical Engineering, College of Engineering, Qassim University, Al-Malida, Buraydah 52571, Saudi Arabia.
Sensors (Basel). 2022 Jan 27;22(3):974. doi: 10.3390/s22030974.
This paper presents a wide dynamic-range CMOS rectifier with high efficiency and high sensitivity for RF energy harvesting. A new adaptive-biasing scheme is implemented using stacking diodes with dynamic threshold voltage to mitigate the reverse-leakage current of the NMOS rectifying devices at high RF power levels. The proposed design employs the adaptive-biasing technique to control the conduction of the PMOS rectifying devices with self-bulk biasing of the feedback diodes to minimize the leakage current. The proposed novel techniques extend the dynamic range of the RF-to-DC power converter with high efficiency, which is 17 times better than a conventional cross-coupled rectifier. The prototype is implemented using a standard 65 nm CMOS technology and occupies a 0.0093 mm active area. The proposed design achieves a peak power conversion efficiency (peak PCE) of 73%, -18.8 dBm 1-V sensitivity, and a superb dynamic range of 17.3 dB with efficiency greater than 80% of its peak PCE, which outperforms the state-of-the-art RF CMOS rectifiers, when operating at UHF 900 MHz with a 100-KΩ load.
本文提出了一种用于射频能量收集的具有高效率和高灵敏度的宽动态范围CMOS整流器。采用具有动态阈值电压的堆叠二极管实现了一种新的自适应偏置方案,以减轻在高射频功率水平下NMOS整流器件的反向漏电流。所提出的设计采用自适应偏置技术,通过反馈二极管的自体偏置来控制PMOS整流器件的导通,以最小化漏电流。所提出的新颖技术以高效率扩展了射频到直流功率转换器的动态范围,比传统的交叉耦合整流器好17倍。该原型采用标准65nm CMOS技术实现,有源面积为0.0093平方毫米。所提出的设计在100-KΩ负载、UHF 900MHz工作时,实现了73%的峰值功率转换效率(峰值PCE)、-18.8dBm的1-V灵敏度以及17.3dB的超宽动态范围,且效率大于其峰值PCE的80%,优于目前最先进的射频CMOS整流器。