应变诱导的石墨烯中激子的量子霍尔效应

Strain-induced quantum Hall phenomena of excitons in graphene.

作者信息

Berman Oleg L, Kezerashvili Roman Ya, Lozovik Yurii E, Ziegler Klaus G

机构信息

Physics Department, New York City College of Technology, The City University of New York, Brooklyn, NY, 11201, USA.

The Graduate School and University Center, The City University of New York, New York, NY, 10016, USA.

出版信息

Sci Rep. 2022 Feb 22;12(1):2950. doi: 10.1038/s41598-022-06486-z.

DOI:10.1038/s41598-022-06486-z

PMID:35194045

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8863812/

Abstract

We study direct and indirect pseudomagnetoexcitons, formed by an electron and a hole in the layers of gapped graphene under strain-induced gauge pseudomagnetic field. Since the strain-induced pseudomagnetic field acts on electrons and holes the same way, it occurs that the properties of single pseudomagnetoexcitons, their collective effects and phase diagram are cardinally different from those of magnetoexcitons in a real magnetic field. We have derived wave functions and energy spectrum of direct in a monolayer and indirect pseudomagnetoexcitons in a double layer of gapped graphene. The quantum Hall effect for direct and indirect excitons was predicted in the monolayers and double layers of gapped graphene under strain-induced gauge pseudomagnetic field, correspondingly.

摘要

我们研究了在应变诱导规范伪磁场下，带隙石墨烯层中由一个电子和一个空穴形成的直接和间接伪磁激子。由于应变诱导的伪磁场对电子和空穴的作用方式相同，因此单个伪磁激子的性质、它们的集体效应和相图与真实磁场中的磁激子有根本区别。我们推导了单层带隙石墨烯中直接伪磁激子和双层带隙石墨烯中间接伪磁激子的波函数和能谱。相应地，在应变诱导规范伪磁场下，预测了带隙石墨烯单层和双层中直接和间接激子的量子霍尔效应。