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氢化准自由-standing 石墨烯中的可调带隙。

Tunable band gap in hydrogenated quasi-free-standing graphene.

机构信息

IFW Dresden, PO Box 270116, D-01171 Dresden,Germany.

出版信息

Nano Lett. 2010 Sep 8;10(9):3360-6. doi: 10.1021/nl101066m.

Abstract

We show by angle-resolved photoemission spectroscopy that a tunable gap in quasi-free-standing monolayer graphene on Au can be induced by hydrogenation. The size of the gap can be controlled via hydrogen loading and reaches approximately 1.0 eV for a hydrogen coverage of 8%. The local rehybridization from sp(2) to sp(3) in the chemical bonding is observed by X-ray photoelectron spectroscopy and X-ray absorption and allows for a determination of the amount of chemisorbed hydrogen. The hydrogen induced gap formation is completely reversible by annealing without damaging the graphene. Calculations of the hydrogen loading dependent core level binding energies and the spectral function of graphene are in excellent agreement with photoemission experiments. Hydrogenation of graphene gives access to tunable electronic and optical properties and thereby provides a model system to study hydrogen storage in carbon materials.

摘要

我们通过角分辨光电子能谱表明,氢化可以在 Au 上的准自由-standing 单层石墨烯中诱导可调隙。通过氢气负载可以控制间隙的大小,对于 8%的氢气覆盖度,间隙大小约为 1.0 eV。通过 X 射线光电子能谱和 X 射线吸收观察到化学键中 sp(2)到 sp(3)的局部再杂化,这允许确定化学吸附氢的量。通过退火可以完全可逆地形成氢诱导的间隙,而不会损坏石墨烯。计算依赖于氢负载的芯能级结合能和石墨烯的光谱函数与光电子实验非常吻合。石墨烯的氢化可以获得可调谐的电子和光学性质,从而提供了一个研究碳材料中储氢的模型系统。

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