Wang Hongyue, Shi Yijun, Xin Yajie, Liu Chang, Lu Guoguang, Huang Yun
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China.
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.
Micromachines (Basel). 2022 Jan 25;13(2):176. doi: 10.3390/mi13020176.
This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage () stability. The clamping channel potential for P-HEMT is achieved by a partially-recessed p-GaN layer (PR p-GaN layer). At high drain bias, the two-dimensional electron gas (2DEG) channel under the PR p-GaN layer is depleted to withstand the drain bias. Therefore, the channel potential at the drain-side of the p-GaN layer is clamped to improve BV and stability. Compared with the conventional p-GaN HEMT (C-HEMT), simulation results show that the BV is improved by 120%, and the stability induced by high drain bias is increased by 490% for the same on-resistance. In addition, the influence of the PR p-GaN layers' length, thickness, doping density on BV and stability is analyzed. The proposed device can be a good reference to improve breakdown voltage and threshold voltage stability for short-channel power p-GaN HEMTs.
本文提出了一种新型的p型氮化镓高电子迁移率晶体管（P-HEMT），通过钳位沟道电势来提高击穿电压（BV）和阈值电压（）稳定性。P-HEMT的钳位沟道电势是通过部分凹陷的p型氮化镓层（PR p型氮化镓层）实现的。在高漏极偏置下，PR p型氮化镓层下方的二维电子气（2DEG）沟道被耗尽以承受漏极偏置。因此，p型氮化镓层漏极侧的沟道电势被钳位，从而提高了BV和稳定性。与传统的p型氮化镓高电子迁移率晶体管（C-HEMT）相比，模拟结果表明，在相同导通电阻的情况下，BV提高了120%，由高漏极偏置引起的稳定性提高了490%。此外，还分析了PR p型氮化镓层的长度、厚度、掺杂密度对BV和稳定性的影响。所提出的器件可为提高短沟道功率p型氮化镓高电子迁移率晶体管的击穿电压和阈值电压稳定性提供良好的参考。
