具有场板结构的优化氮化铝镓/氮化镓高电子迁移率晶体管

Optimization AlGaN/GaN HEMT with Field Plate Structures.

作者信息

Shi Ningping, Wang Kejia, Zhou Bing, Weng Jiafu, Cheng Zhiyuan

机构信息

School of Materials Science and Engineering, Key Laboratory of New Processing Technology for Nonferrous Metals and Materials of Ministry of Education, Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, Guilin 541004, China.

School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, China.

出版信息

Micromachines (Basel). 2022 Apr 29;13(5):702. doi: 10.3390/mi13050702.

DOI:10.3390/mi13050702

PMID:35630169

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9143488/

Abstract

AlGaN/GaN HEMTs with several different designs of field plate structure are studied for device optimization purposes. To increase device breakdown voltage, optimal dimensions of field plates were first investigated using Silvaco TCAD software, and the electrical characteristics of the devices are analyzed. Several devices were designed and fabricated based on the simulation results. It has been confirmed that the gate-source composite field plate (SG-FP) has a higher breakdown voltage than other types of field plate structures, with FOM reaches 504 MW/cm, showing that the device with SG-FP structure outperforms the other three structures. The experiment and simulation verify that the gate-source composite field plate optimizes FOM by increasing the breakdown voltage and reducing the intrinsic on-resistance so that the device has better electrical performance and a wider application range.

摘要

为了实现器件优化，对具有几种不同场板结构设计的AlGaN/GaN高电子迁移率晶体管（HEMT）进行了研究。为了提高器件的击穿电压，首先使用Silvaco TCAD软件研究了场板的最佳尺寸，并分析了器件的电学特性。基于模拟结果设计并制造了几种器件。已经证实，栅源复合场板（SG-FP）具有比其他类型场板结构更高的击穿电压，优值达到504 MW/cm，表明具有SG-FP结构的器件性能优于其他三种结构。实验和模拟验证了栅源复合场板通过提高击穿电压和降低本征导通电阻来优化优值，从而使器件具有更好的电学性能和更广泛的应用范围。