Anderson Ryan, Cohen Daniel, Zhang Haojun, Trageser Emily, Palmquist Nathan, Nakamura Shuji, DenBaars Steven
Opt Express. 2022 Jan 17;30(2):2759-2767. doi: 10.1364/OE.445512.
We report continuous wave operation of electrically injected InGaN laser diodes using nano-porous GaN n-side cladding with 33% porosity. At 454 nm emission wavelength, the pulsed injection slope efficiency is 0.24 W/A with a high loss of 82 cm. The considerable 60 cm of excess loss of the nano-porous clad lasers is attributed to scattering at pores in unintentionally 3% porosified layers, supported by numerical modeling. Simulations comparing porous GaN cladding to AlInN cladding for lasers operating at 589 nm indicate that the porous cladding provides similar internal loss and lower thermal impedance.
我们报道了使用孔隙率为33%的纳米多孔GaN n侧包层的电注入InGaN激光二极管的连续波操作。在454nm发射波长下，脉冲注入斜率效率为0.24W/A，具有82cm的高损耗。纳米多孔包层激光器相当可观的60cm额外损耗归因于在无意孔隙率为3%的层中的孔隙处的散射，这得到了数值模拟的支持。将用于589nm工作的激光器的多孔GaN包层与AlInN包层进行比较的模拟表明，多孔包层提供了相似的内部损耗和更低的热阻抗。
