氧化铟锡（ITO）、氮化铝铟（AlInN）、等离子体氮化镓（Plasmonic GaN）和顶部金金属化对半极性绿色发光二极管的影响的数值研究。
Numerical Investigation of the Impact of ITO, AlInN, Plasmonic GaN and Top Gold Metalization on Semipolar Green EELs.
作者信息
Kuc Maciej, Piskorski Łukasz, Dems Maciej, Wasiak Michał, Sokół Adam K, Sarzała Robert P, Czyszanowski Tomasz
机构信息
Institute of Physics, Lodz University of Technology, Lodz, Poland.
出版信息
Materials (Basel). 2020 Mar 22;13(6):1444. doi: 10.3390/ma13061444.
In this paper, we present the results of a computational analysis of continuous-wave (CW) room-temperature (RT) semipolar InGaN/GaN edge-emitting lasers (EELs) operating in the green spectral region. In our calculations, we focused on the most promising materials and design solutions for the cladding layers, in terms of enhancing optical mode confinement. The structural modifications included optimization of top gold metalization, partial replacement of p-type GaN cladding layers with ITO and introducing low refractive index lattice-matched AlInN or plasmonic GaN regions. Based on our numerical findings, we show that by employing new material modifications to green EELs operating at around 540 nm it is possible to decrease their CW RT threshold current densities from over 11 kA/cm to less than 7 kA/cm.
在本文中，我们展示了对工作在绿色光谱区域的连续波（CW）室温（RT）半极性氮化铟镓/氮化镓边发射激光器（EEL）进行计算分析的结果。在我们的计算中，就增强光模式限制而言，我们专注于包层最具前景的材料和设计方案。结构修改包括优化顶部金金属化、用氧化铟锡部分替代p型氮化镓包层以及引入低折射率晶格匹配的氮化铝铟或等离子体氮化镓区域。基于我们的数值结果，我们表明，通过对工作在约540nm的绿色边发射激光器采用新的材料修改，有可能将其连续波室温阈值电流密度从超过11kA/cm降低到小于7kA/cm。
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