Myzaferi Anisa, Mughal Asad J, Cohen Daniel A, Farrell Robert M, Nakamura Shuji, Speck James S, DenBaars Steven P
Opt Express. 2018 May 14;26(10):12490-12498. doi: 10.1364/OE.26.012490.
We report continuous-wave (CW) blue semipolar (202¯1) III-nitride laser diodes (LDs) that incorporate limited area epitaxy (LAE) n-AlGaN bottom cladding with thin p-GaN and ZnO top cladding layers. LAE mitigates LD design limitations that arise from stress relaxation, while ZnO layers reduce epitaxial growth time and temperature. Numerical modeling indicates that ZnO reduces the internal loss and increases the differential efficiency of TCO clad LDs. Room temperature CW lasing was achieved at 445 nm for a ridge waveguide LD with a threshold current density of 10.4 kA/cm, a threshold voltage of 5.8 V, and a differential resistance of 1.1 Ω.
我们报道了连续波（CW）蓝色半极性（202¯1）III族氮化物激光二极管（LD），其采用了有限面积外延（LAE）的n-AlGaN底部包层以及薄的p-GaN和ZnO顶部包层。LAE减轻了因应力弛豫而产生的LD设计限制，而ZnO层则缩短了外延生长时间并降低了生长温度。数值模拟表明，ZnO降低了内部损耗并提高了透明导电氧化物（TCO）包层LD的微分效率。对于脊形波导LD，在室温连续波条件下实现了445 nm激射，其阈值电流密度为10.4 kA/cm，阈值电压为5.8 V，微分电阻为1.1 Ω。
