采用绝缘体上锗锡微盘谐振器实现高达300K的激光发射。

Up to 300 K lasing with GeSn-On-Insulator microdisk resonators.

作者信息

Bjelajac A, Gromovyi M, Sakat E, Wang B, Patriarche G, Pauc N, Calvo V, Boucaud P, Boeuf F, Chelnokov A, Reboud V, Frauenrath M, Hartmann J-M, El Kurdi M

出版信息

Opt Express. 2022 Jan 31;30(3):3954-3961. doi: 10.1364/OE.449895.

DOI:10.1364/OE.449895

PMID:35209643

Abstract

GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn. This is achieved in microdisk resonators fabricated on a GeSn-On-Insulator platform by combining strain engineering with a thick layer of high Sn content GeSn.

摘要

锗锡合金是最具前景的直接带隙半导体，有望实现与基于IV族材料制造的全CMOS兼容激光集成。在此，我们展示了使用锗锡合金可在高达300K的室温下实现激光发射。这是通过在绝缘体上锗锡平台上制造的微盘谐振器实现的，方法是将应变工程与高锡含量的厚锗锡层相结合。