Abernathy Grey, Ojo Solomon, Said Abdulla, Grant Joshua M, Zhou Yiyin, Stanchu Hryhorii, Du Wei, Li Baohua, Yu Shui-Qing
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
Material Science & Engineering Program, University of Arkansas, Fayetteville, AR, 72701, USA.
Sci Rep. 2023 Oct 28;13(1):18515. doi: 10.1038/s41598-023-45916-4.
Direct band gap GeSn alloys have recently emerged as promising lasing source materials for monolithic integration on Si substrate. In this work, optically pumped mid-infrared GeSn lasers were studied with the observation of dual-wavelength lasing at 2187 nm and 2460 nm. Two simultaneous lasing regions include a GeSn buffer layer (bulk) and a SiGeSn/GeSn multiple quantum well structure that were grown seamlessly using a chemical vapor deposition reactor. The onset of dual lasing occurs at 420 kW/cm. The wider bandgap SiGeSn partitioning barrier enables the independent operation of two gain regions. While the better performance device in terms of lower threshold may be obtained by using two MQW regions design, the preliminary results and discussions in this work paves a way towards all-group-IV dual wavelength lasers monolithically integrated on Si substrate.
直接带隙锗锡合金最近已成为有望用于在硅衬底上进行单片集成的激光源材料。在这项工作中，对光泵浦中红外锗锡激光器进行了研究，观察到在2187纳米和2460纳米处的双波长激光发射。两个同时存在的激光区域包括一个锗锡缓冲层（体材料）和一个硅锗锡/锗锡多量子阱结构，它们是使用化学气相沉积反应器无缝生长的。双激光发射的起始功率为420千瓦/平方厘米。带隙更宽的硅锗锡分隔势垒使两个增益区域能够独立工作。虽然通过使用两个多量子阱区域设计可能会获得阈值更低、性能更好的器件，但这项工作中的初步结果和讨论为在硅衬底上单片集成的全IV族双波长激光器铺平了道路。
