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高精度低温漂 LDO 稳压器,专为时域温度传感器定制。

High-Precision Low-Temperature Drift LDO Regulator Tailored for Time-Domain Temperature Sensors.

机构信息

Department of Bases of Electronics, Technical University of Cluj-Napoca, 400114 Cluj-Napoca, Romania.

Infineon Technologies, 020335 Bucharest, Romania.

出版信息

Sensors (Basel). 2022 Feb 16;22(4):1518. doi: 10.3390/s22041518.

DOI:10.3390/s22041518
PMID:35214420
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8880122/
Abstract

This paper proposes a high-precision LDO with low-temperature drift suitable for sensitive time-domain temperature sensors. Its topology is based on multiple feedback loops and a novel approach to frequency compensation, that allows the LDO to maintain a large DC gain while handling capacitive loads that vary over a wide range. The key design constraints are derived by using a simplified, yet intuitive and effective, small-signal analysis devised for LDOs with multiple feedback loops. Simulation and measurement results are presented for implementation in a standard 130 nm CMOS process: the LDO outputs a stable 1 V voltage, when the input voltage varies between 1.25 V to 1.5 V, the load current between 0 and 100 mA, and the load capacitor between zero and 400 pF. It exhibits a DC load regulation of 1 µV/mA, a 288 µV output offset with a standard deviation of 9.5 mV. A key feature for the envisaged application is the very low thermal drift of the output offset: only 14.4 mV across the temperature range of -40 °C to +150 °C. Overall, the LDO output voltage stays within +/-3.5% of the nominal DC value over the entire line voltage, load, and temperature ranges, without trimming. The LDO requires only 1.4µA quiescent current, yet it provides excellent responses to load transients. The output voltage undershoot and overshoot caused by the load current jumping between 0 and 100 mA in 1 µs are: 10%/22% for CL = 0 and 12%/16% for CL = 400 pF, respectively. A comparative analysis against seven LDOs published in the last decade, designed for similar levels of supply voltage and output voltage and current, shows that the LDO presented here is the best option for supplying sensitive time-domain temperature sensors. The smallest thermal drift of the output offset, smaller than +/-15 mV, that is, 6.7 times smaller than its closest competitor, and the best overall performance when PSR up to 1 kHz, was considered.

摘要

本文提出了一种适用于敏感器件的高精度、低温度漂移低压差线性稳压器(LDO)。其拓扑结构基于多个反馈环路和一种新颖的频率补偿方法,允许 LDO 在处理大范围变化的电容负载时保持大的直流增益。关键设计约束条件是通过使用简化但直观有效的小信号分析方法推导出来的,该方法适用于具有多个反馈环路的 LDO。本文提出的 LDO 采用标准的 130nm CMOS 工艺实现,其仿真和测量结果表明:当输入电压在 1.25V 到 1.5V 之间变化,负载电流在 0 到 100mA 之间变化,负载电容在 0 到 400pF 之间变化时,LDO 可以输出稳定的 1V 电压。其直流负载调节为 1µV/mA,输出失调为 288µV,标准偏差为 9.5mV。对于预期的应用,一个关键特性是输出失调的极低温度漂移:在-40°C 到+150°C 的温度范围内,仅为 14.4mV。总的来说,在整个线电压、负载和温度范围内,LDO 输出电压保持在标称直流值的 +/-3.5%以内,无需调整。LDO 仅需 1.4µA 的静态电流,但对负载瞬态有很好的响应。当负载电流在 1µs 内从 0 跳变到 100mA 时,输出电压的下冲和过冲分别为:CL=0 时为 10%/22%,CL=400pF 时为 12%/16%。与过去十年中设计用于类似电源电压和输出电压及电流的七个 LDO 进行比较分析表明,本文提出的 LDO 是为敏感器件提供电源的最佳选择。LDO 输出失调的温度漂移最小,小于 +/-15mV,比最接近的竞争对手小 6.7 倍,在 PSR 高达 1kHz 时具有最佳的整体性能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/959a7704c749/sensors-22-01518-g013.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/d870dc7f0b8f/sensors-22-01518-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/49c314477b02/sensors-22-01518-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/45387055a4ff/sensors-22-01518-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/39fc0965d9db/sensors-22-01518-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/c7715e83c3b3/sensors-22-01518-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/ef070929c4ab/sensors-22-01518-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/eed9ecdb8dce/sensors-22-01518-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/6f518121cedf/sensors-22-01518-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/ce27a933b125/sensors-22-01518-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/959a7704c749/sensors-22-01518-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/bc7396cc3bbf/sensors-22-01518-g001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/324f29a59406/sensors-22-01518-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/d870dc7f0b8f/sensors-22-01518-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/49c314477b02/sensors-22-01518-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/45387055a4ff/sensors-22-01518-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/39fc0965d9db/sensors-22-01518-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/c7715e83c3b3/sensors-22-01518-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/ef070929c4ab/sensors-22-01518-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/eed9ecdb8dce/sensors-22-01518-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/6f518121cedf/sensors-22-01518-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/ce27a933b125/sensors-22-01518-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba09/8880122/959a7704c749/sensors-22-01518-g013.jpg

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本文引用的文献

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Categorization and Characterization of Time Domain CMOS Temperature Sensors.时域CMOS温度传感器的分类与特性分析
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A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System.用于片上传感器阵列阻抗测量系统的 0.18μm CMOS LDO 稳压器。
Sensors (Basel). 2018 May 2;18(5):1405. doi: 10.3390/s18051405.
3
Design of an Embedded CMOS Temperature Sensor for Passive RFID Tag Chips.用于无源射频识别标签芯片的嵌入式CMOS温度传感器设计
Sensors (Basel). 2015 May 18;15(5):11442-53. doi: 10.3390/s150511442.