Byun Sangjin
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.
Sensors (Basel). 2020 Nov 23;20(22):6700. doi: 10.3390/s20226700.
Time domain complementary metal-oxide-semiconductor (CMOS) temperature sensors estimate the temperature of a sensory device by measuring the frequency, period and/or delay time instead of the voltage and/or current signals that have been traditionally measured for a long time. In this paper, the time domain CMOS temperature sensors are categorized into twelve types by using the temperature estimation function which is newly defined as the ratio of two measured time domain signals. The categorized time domain CMOS temperature sensors, which have been published in literature, show different characteristics respectively in terms of temperature conversion rate, die area, process variation compensation, temperature error, power supply voltage sensitivity and so on. Based on their characteristics, we can choose the most appropriate one from twelve types to satisfy a given specification.
时域互补金属氧化物半导体(CMOS)温度传感器通过测量频率、周期和/或延迟时间来估算传感设备的温度,而不是像长期以来传统测量那样测量电压和/或电流信号。在本文中,通过使用新定义为两个测量时域信号之比的温度估计函数,将时域CMOS温度传感器分为十二种类型。文献中已发表的分类后的时域CMOS温度传感器在温度转换率、芯片面积、工艺变化补偿、温度误差、电源电压灵敏度等方面分别表现出不同的特性。基于它们的特性,我们可以从十二种类型中选择最合适的一种来满足给定的规格要求。