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通过自组装GdF纳米晶体单层的胶体光刻实现亚5纳米各向异性图案转移

Sub-5 nm Anisotropic Pattern Transfer via Colloidal Lithography of a Self-Assembled GdF Nanocrystal Monolayer.

作者信息

Keller Austin W, Marino Emanuele, An Di, Neuhaus Steven J, Elbert Katherine C, Murray Christopher B, Kagan Cherie R

出版信息

Nano Lett. 2022 Mar 9;22(5):1992-2000. doi: 10.1021/acs.nanolett.1c04761. Epub 2022 Feb 28.

Abstract

Patterning materials with nanoscale features opens many research opportunities ranging from fundamental science to technological applications. However, current nanofabrication methods are ill-suited for sub-5 nm patterning and pattern transfer. We demonstrate the use of colloidal lithography to transfer an anisotropic pattern of discrete features into substrates with a critical dimension below 5 nm. The assembly of monodisperse, anisotropic nanocrystals (NCs) with a rhombic-plate morphology spaced by dendrimer ligands results in a well-ordered monolayer that serves as a 2D anisotropic hard mask pattern. This pattern is transferred into the underlying substrate using dry etching followed by removal of the NC mask. We exemplify this approach by fabricating an array of pillars with a rhombic cross-section and edge-to-edge spacing of 4.4 ± 1.1 nm. The fabrication approach enables broader access to patterning materials at the deep nanoscale by implementing innovative processes into well-established fabrication methods while minimizing process complexity.

摘要

具有纳米级特征的图案化材料开启了从基础科学到技术应用的诸多研究机遇。然而,当前的纳米制造方法并不适合低于5纳米的图案化及图案转移。我们展示了利用胶体光刻技术将离散特征的各向异性图案转移到临界尺寸低于5纳米的基底中。具有菱形板形态的单分散、各向异性纳米晶体(NCs)通过树枝状聚合物配体间隔组装,形成了一个有序的单层,作为二维各向异性硬掩膜图案。使用干法蚀刻将该图案转移到下层基底,随后去除NC掩膜。我们通过制造具有菱形横截面且边到边间距为4.4±1.1纳米的柱阵列来例证这种方法。该制造方法通过在成熟的制造方法中实施创新工艺,同时将工艺复杂性降至最低,从而使人们能够更广泛地获取深纳米级的图案化材料。

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