Jooq Mohammad Khaleqi Qaleh, Moaiyeri Mohammad Hossein, Al-Shidaifat Alaaddin, Song Hanjung
IEEE Trans Ultrason Ferroelectr Freq Control. 2022 May;69(5):1829-1840. doi: 10.1109/TUFFC.2022.3158822. Epub 2022 Apr 27.
In designing ultra-efficient noise immune nanoscale circuits and systems, Schmitt triggers (STs) are vital components influencing total functionality. This article proposes an ultracompact ST using ferroelectric carbon nanotube field-effect transistors (Fe-CNTFETs) and a robust ST latch. By using the unique electrical futures of the Fe-CNTFETs, the proposed ST has been designed in a particular way to only employ two transistors similar to a conventional binary inverter. Moreover, by utilizing the negative capacitance feature of the Fe-CNTFETs, the proposed ST can perform the backup and restore operation during a scheduled power gating or a sudden power outage without imposing any additional transistors, interconnects, and control signals. The proposed ST latch is hardened to soft errors occurring due to unwanted single-event upsets (SEUs). Our extensive simulations demonstrate that our proposed ST latch offers lower transistors counts (on average 34%) and more energy savings (on average 79%). On the other hand, our design has shown 5.6 times on average higher critical charge tolerance than the previous counterparts due to its soft error hardening circuity and the superior hysteresis behavior of the proposed Fe-CNTFET-based ST. Moreover, the auto-nonvolatility of the proposed ST makes the proposed latches immune to the sudden power outage, which was not devised in the previous ST latches. Our results show new pathways in designing ultracompact and efficient nonvolatile ST latches using the Fe-CNTFET technology.
在设计超高效抗噪声纳米级电路和系统时,施密特触发器(ST)是影响整体功能的关键组件。本文提出了一种使用铁电碳纳米管场效应晶体管(Fe-CNTFET)的超紧凑型ST和一种稳健的ST锁存器。通过利用Fe-CNTFET独特的电学特性,所提出的ST以一种特殊方式设计,仅采用两个类似于传统二进制反相器的晶体管。此外,通过利用Fe-CNTFET的负电容特性,所提出的ST能够在预定的电源门控或突然停电期间执行备份和恢复操作,而无需任何额外的晶体管、互连和控制信号。所提出的ST锁存器对因意外单粒子翻转(SEU)而出现的软错误具有抗性。我们广泛的仿真表明,我们提出的ST锁存器具有更低的晶体管数量(平均减少34%)和更多的节能效果(平均节省79%)。另一方面,由于其软错误抗性电路以及所提出的基于Fe-CNTFET的ST的卓越滞后行为,我们的设计平均临界电荷容限比之前的同类产品高出5.6倍。此外,所提出的ST的自动非易失性使所提出的锁存器能够抵御突然停电,这是之前的ST锁存器所没有的。我们的结果展示了利用Fe-CNTFET技术设计超紧凑型高效非易失性ST锁存器的新途径。