Kimbrough Joevonte, Williams Lauren, Yuan Qunying, Xiao Zhigang
Department of Electrical Engineering and Computer Science, Alabama A&M University, Normal, AL 35762, USA.
Department of Biological and Environmental Science, Alabama A&M University, Normal, AL 35762, USA.
Micromachines (Basel). 2020 Dec 25;12(1):12. doi: 10.3390/mi12010012.
In this paper, we report the wafer-scale fabrication of carbon nanotube field-effect transistors (CNTFETs) with the dielectrophoresis (DEP) method. Semiconducting carbon nanotubes (CNTs) were positioned as the active channel material in the fabrication of carbon nanotube field-effect transistors (CNTFETs) with dielectrophoresis (DEP). The drain-source current (I) was measured as a function of the drain-source voltage (V) and gate-source voltage (V) from each CNTFET on the fabricated wafer. The I on/off ratio was derived for each CNTFET. It was found that 87% of the fabricated CNTFETs was functional, and that among the functional CNTFETs, 30% of the CNTFETs had an I on/off ratio larger than 20 while 70% of the CNTFETs had an I on/off ratio lower than 20. The highest I on/off ratio was about 490. The DEP-based positioning of carbon nanotubes is simple and effective, and the DEP-based device fabrication steps are compatible with Si technology processes and could lead to the wafer-scale fabrication of CNT electronic devices.
在本文中，我们报告了采用介电泳（DEP）方法在晶圆级制造碳纳米管场效应晶体管（CNTFET）。在利用介电泳（DEP）制造碳纳米管场效应晶体管（CNTFET）的过程中，将半导体碳纳米管（CNT）定位为有源沟道材料。在制造的晶圆上，测量每个CNTFET的漏源电流（I）随漏源电压（V）和栅源电压（V）的变化。得出每个CNTFET的I开/关比。结果发现，所制造的CNTFET中有87%是功能性的，并且在功能性CNTFET中，30%的CNTFET的I开/关比大于20，而70%的CNTFET的I开/关比低于20。最高的I开/关比约为490。基于DEP的碳纳米管定位简单有效，基于DEP的器件制造步骤与硅技术工艺兼容，并可实现CNT电子器件的晶圆级制造。
