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过渡金属团簇在石墨烯和氮掺杂石墨烯上的吸附:一项密度泛函理论研究

Adsorption of Transition-Metal Clusters on Graphene and N-Doped Graphene: A DFT Study.

作者信息

Jin Chengkai, Cheng Lihong, Feng Gang, Ye Runping, Lu Zhang-Hui, Zhang Rongbin, Yu Xiaohu

机构信息

Key Laboratory of Jiangxi Province for Environment and Energy Catalysis, Institute of Applied Chemistry, College of Chemistry, Nanchang University, No. 999 Xuefu Road, Nanchang 330031, P. R. China.

Key Laboratory of Surface Engineering of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330031, P. R. China.

出版信息

Langmuir. 2022 Mar 29;38(12):3694-3710. doi: 10.1021/acs.langmuir.1c03187. Epub 2022 Mar 14.

Abstract

Using the dispersion-corrected density functional theory (DFT-D3) method, we systematically studied the adsorption of 15 kinds of transition-metal (TM) clusters on pristine graphene (Gr) and N-doped graphene (N-Gr). It has been found that TM ( = 1-4) clusters adsorbed on the N-Gr surface are much stronger than those on the pristine Gr surface, while 3d series clusters present similar geometries on Gr and N-Gr surfaces. The most preferred sites of TMs migrate from hollow to bridge to the top site on the Gr surface along the d series in the periodic table, while the preferred sites of TMs migrate in a much more complex manner on the N-Gr surface. It has also been found that charge transfer decreases along the d series for adsorbed clusters on both surfaces, but adsorbed clusters present less charge transfer on the N-Gr surface than on the Gr surface. What is more interesting is that some TM (Tc, Ru, and Re) clusters change the growth mechanism from the three-dimensional (3D) growth mode on the Gr surface to the two-dimensional (2D) growth mode on the N-Gr surface. At last, it has been found that adsorbed clusters are more dispersed on the N-Gr surface than on the pristine Gr surface due to growth and average aggregation energies.

摘要

采用色散校正密度泛函理论(DFT-D3)方法,我们系统地研究了15种过渡金属(TM)团簇在原始石墨烯(Gr)和氮掺杂石墨烯(N-Gr)上的吸附情况。研究发现,吸附在N-Gr表面的TM( = 1-4)团簇比吸附在原始Gr表面的要强得多,而3d系列团簇在Gr和N-Gr表面呈现相似的几何结构。在Gr表面,TMs的最优选吸附位点沿着元素周期表中的d系列从空心位迁移到桥位再到顶位,而在N-Gr表面,TMs的优选吸附位点迁移方式更为复杂。还发现,对于两个表面上吸附的团簇,电荷转移都沿着d系列减少,但吸附在N-Gr表面的团簇比吸附在Gr表面的团簇电荷转移更少。更有趣的是,一些TM(Tc、Ru和Re)团簇将生长机制从Gr表面的三维(3D)生长模式转变为N-Gr表面的二维(2D)生长模式。最后,研究发现,由于生长和平均聚集能,吸附的团簇在N-Gr表面比在原始Gr表面更分散。

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