Wang Zhongwu, Chen Xiaosong, Yu Li, Guo Shujing, Hu Yongxu, Huang Yinan, Wang Shuguang, Qi Jiannan, Han Cheng, Ma Xiaonan, Zhang Xiaotao, Dong Huanli, Chen Wei, Li Liqiang, Hu Wenping
Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin 300072, China.
SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
ACS Appl Mater Interfaces. 2022 Mar 23;14(11):13584-13592. doi: 10.1021/acsami.1c23994. Epub 2022 Mar 14.
The photoelectric response of organic field-effect transistors (OFETs) will cause severe photoelectric interference, which hinders the applications of OFETs in the light environment. It is highly challenging to relieve this problem because of the high photosensitivity of most organic semiconductors. Here, we propose an efficient "exciton-polaron quenching" strategy to suppress the photoelectric response and thus construct highly photostable OFETs by utilizing a polymer electrolyte dielectric─poly(acrylic acid) (PAA). This dielectric produces high-density polarons in organic semiconductors under a gate electric field that quench the photogenerated excitons with high efficiency (∼70%). As a result, the OFETs with PAA dielectric exhibit unprecedented photostability against strong light irradiation up to 214 mW/cm, which far surpasses the reported values and solar irradiance value (∼138 mW/cm). The strategy shows high universality in OFETs with different OSCs and electrolytes. As a demonstration, the photostable OFET can stably drive an organic light-emitting diode (OLED) under light irradiation. This work presents an efficient exciton modulation strategy in OSC and proves a high potential in practical applications.
有机场效应晶体管(OFETs)的光电响应会导致严重的光电干扰,这阻碍了OFETs在光照环境中的应用。由于大多数有机半导体的高光敏性,缓解这一问题极具挑战性。在此,我们提出一种有效的“激子-极化子猝灭”策略来抑制光电响应,从而通过使用聚合物电解质电介质——聚丙烯酸(PAA)构建高度光稳定的OFETs。这种电介质在栅极电场下在有机半导体中产生高密度极化子,从而高效猝灭光生激子(70%)。结果,具有PAA电介质的OFETs在高达214 mW/cm的强光照射下表现出前所未有的光稳定性,这远远超过了报道的值和太阳辐照度值(138 mW/cm)。该策略在具有不同有机半导体和电解质的OFETs中具有高度通用性。作为一个例证,光稳定的OFET可以在光照下稳定驱动有机发光二极管(OLED)。这项工作在有机半导体中提出了一种有效的激子调制策略,并证明了其在实际应用中的巨大潜力。