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使用氙等离子体聚焦离子束进行高质量透射电子显微镜样品制备。

Using Xe Plasma FIB for High-Quality TEM Sample Preparation.

作者信息

Vitale Suzy M, Sugar Joshua D

机构信息

Earth and Planets Laboratory, Carnegie Institution for Science, 5241 Broad Branch Rd NW, Washington, DC20015, USA.

Sandia National Laboratories, Livermore, CA94550, USA.

出版信息

Microsc Microanal. 2022 Mar 15:1-13. doi: 10.1017/S1431927622000344.

DOI:10.1017/S1431927622000344
PMID:35289261
Abstract

A direct comparison between electron transparent transmission electron microscope (TEM) samples prepared with gallium (Ga) and xenon (Xe) focused ion beams (FIBs) is performed to determine if equivalent quality samples can be prepared with both ion species. We prepared samples using Ga FIB and Xe plasma focused ion beam (PFIB) while altering a variety of different deposition and milling parameters. The samples’ final thicknesses were evaluated using STEM-EELS t/λ data. Using the Ga FIB sample as a standard, we compared the Xe PFIB samples to the standard and to each other. We show that although the Xe PFIB sample preparation technique is quite different from the Ga FIB technique, it is possible to produce high-quality, large area TEM samples with Xe PFIB. We also describe best practices for a Xe PFIB TEM sample preparation workflow to enable consistent success for any thoughtful FIB operator. For Xe PFIB, we show that a decision must be made between the ultimate sample thickness and the size of the electron transparent region.

摘要

对使用镓(Ga)和氙(Xe)聚焦离子束(FIB)制备的电子透明透射电子显微镜(TEM)样品进行直接比较,以确定是否可以用这两种离子制备出质量相当的样品。我们在改变各种不同的沉积和铣削参数的同时,使用Ga FIB和Xe等离子体聚焦离子束(PFIB)制备样品。使用扫描透射电子显微镜-电子能量损失谱(STEM-EELS)的t/λ数据评估样品的最终厚度。以Ga FIB样品作为标准,我们将Xe PFIB样品与该标准以及彼此进行比较。我们表明,尽管Xe PFIB样品制备技术与Ga FIB技术有很大不同,但使用Xe PFIB制备高质量、大面积的TEM样品是可能的。我们还描述了Xe PFIB TEM样品制备工作流程的最佳实践,以使任何有经验的FIB操作员都能持续成功。对于Xe PFIB,我们表明必须在最终样品厚度和电子透明区域的大小之间做出决定。

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