Nguyen Chuong V, Nguyen Cuong Q, Nguyen Son-Tung, Ang Yee Sin, Hieu Nguyen V
Department of Materials Science and Engineering, Le Quy Don Technical University, Ha Noi 100000, Vietnam.
Faculty of Physics, College of Education, Hue University, Hue 47000, Vietnam.
J Phys Chem Lett. 2022 Mar 24;13(11):2576-2582. doi: 10.1021/acs.jpclett.2c00245. Epub 2022 Mar 15.
Following the successful synthesis of single-layer metallic Janus MoSH and semiconducting MoSiN, we investigate the electronic and interfacial features of metal/semiconductor MoSH/MoSiN van der Waals (vdW) contact. We find that the metal/semiconductor MoSH/MoSiN contact forms -type Schottky contact (-ShC type) with small Schottky barrier (SB), suggesting that Janus MoSH can be considered as an efficient metallic contact to MoSiN semiconductor with high charge injection efficiency. The electronic structure and interfacial features of the MoSH/MoSiN vdW heterostructure are tunable under strain and electric fields, which give rise to the SB change and the conversion from -ShC to -ShC type and from ShC to Ohmic contact. These findings could provide a new pathway for the design of optoelectronic applications based on metal/semiconductor MoSH/MoSiN vdW heterostructures.
在成功合成单层金属Janus MoSH和半导体MoSiN之后，我们研究了金属/半导体MoSH/MoSiN范德华（vdW）接触的电子和界面特性。我们发现金属/半导体MoSH/MoSiN接触形成具有小肖特基势垒（SB）的n型肖特基接触（n-ShC型），这表明Janus MoSH可被视为对MoSiN半导体具有高电荷注入效率的高效金属接触。MoSH/MoSiN vdW异质结构的电子结构和界面特性在应变和电场作用下是可调的，这会导致肖特基势垒变化以及从n-ShC到p-ShC型以及从肖特基接触到欧姆接触的转变。这些发现可为基于金属/半导体MoSH/MoSiN vdW异质结构的光电子应用设计提供新途径。
