Villamayor Michelle Marie S, Husain Sajid, Oropesa-Nuñez Reinier, Johansson Fredrik O L, Lindblad Rebecka, Lourenço Pedro, Bernard Romain, Witkowski Nadine, Prévot Geoffroy, Sorgenfrei Nomi L A N, Giangrisostomi Erika, Föhlisch Alexander, Svedlindh Peter, Lindblad Andreas, Nyberg Tomas
Division of Solid State Electronics, Department of Electrical Engineering, Uppsala University, Box 65, SE-751 03 Uppsala, Sweden.
Division of Solid State Physics, Department of Materials Science and Engineering, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden.
Nanoscale. 2022 May 5;14(17):6331-6338. doi: 10.1039/d1nr08375a.
We demonstrate that tungsten disulphide (WS) with thicknesses ranging from monolayer (ML) to several monolayers can be grown on SiO/Si, Si, and AlO by pulsed direct current-sputtering. The presence of high quality monolayer and multilayered WS on the substrates is confirmed by Raman spectroscopy since the peak separations between the A-E and A-2LA vibration modes exhibit a gradual increase depending on the number of layers. X-ray diffraction confirms a textured (001) growth of WS films. The surface roughness measured with atomic force microscopy is between 1.5 and 3 Å for the ML films. The chemical composition WS ( = 2.03 ± 0.05) was determined from X-ray Photoelectron Spectroscopy. Transmission electron microscopy was performed on a multilayer film to show the 2D layered structure. A unique method for growing 2D layers directly by sputtering opens up the way for designing 2D materials and batch production of high-uniformity and high-quality (stochiometric, large grain sizes, flatness) WS films, which will advance their practical applications in various fields.
我们证明，通过脉冲直流溅射，可以在SiO/Si、Si和AlO上生长厚度从单层（ML）到几层的二硫化钨（WS）。由于A-E和A-2LA振动模式之间的峰间距随着层数的增加而逐渐增大，拉曼光谱证实了衬底上存在高质量的单层和多层WS。X射线衍射证实了WS薄膜的（001）织构生长。用原子力显微镜测量的ML薄膜的表面粗糙度在1.5至3 Å之间。通过X射线光电子能谱确定了化学成分WS（= 2.03 ± 0.05）。对多层薄膜进行了透射电子显微镜观察，以显示二维层状结构。一种通过溅射直接生长二维层的独特方法为二维材料的设计以及高均匀性和高质量（化学计量比、大晶粒尺寸、平整度）WS薄膜的批量生产开辟了道路，这将推动其在各个领域的实际应用。
