Zhang Yuxin, Feng Shiyi, Guo Jin, Tao Rong, Liu Zhixuan, He Xiangyi, Wang Guoxia, Wang Yue
School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China.
Nanomaterials (Basel). 2024 Aug 16;14(16):1356. doi: 10.3390/nano14161356.
As a layered material with single/multi-atom thickness, two-dimensional transition metal sulfide WS has attracted extensive attention in the field of science for its excellent physical, chemical, optical, and electrical properties. The photoelectric properties of WS are even more promising than graphene. However, there are many existing preparation methods for WS, but few reports on its direct growth on tungsten films. Therefore, this paper studies its preparation method and proposes an innovative two-dimensional material preparation method to grow large-sized WS with higher quality on metal film. In this experiment, it was found that the reaction temperature could regulate the growth direction of WS. When the temperature was below 950 °C, the film showed horizontal growth, while when the temperature was above 1000 °C, the film showed vertical growth. At the same time, through Raman and band gap measurements, it is found that the different thicknesses of precursor film will lead to a difference in the number of layers of WS. The number of layers of WS can be controlled by adjusting the thickness of the precursor.
作为一种具有单原子/多原子厚度的层状材料，二维过渡金属硫化物WS因其优异的物理、化学、光学和电学性能在科学领域引起了广泛关注。WS的光电性能甚至比石墨烯更具前景。然而，WS现有的制备方法众多，但关于其在钨膜上直接生长的报道却很少。因此，本文研究了其制备方法，并提出了一种创新的二维材料制备方法，以在金属膜上生长高质量的大尺寸WS。在本实验中，发现反应温度可以调节WS的生长方向。当温度低于950℃时，薄膜呈现水平生长，而当温度高于1000℃时，薄膜呈现垂直生长。同时，通过拉曼光谱和带隙测量发现，前驱体膜的不同厚度会导致WS层数的差异。WS的层数可以通过调节前驱体的厚度来控制。
