Gultom Pangihutan, Chiang Jiang-Yan, Huang Tzu-Tai, Lee Jung-Chuan, Su Shu-Hsuan, Huang Jung-Chung Andrew
Department of Physics, National Cheng Kung University, Tainan 701, Taiwan.
Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan.
Nanomaterials (Basel). 2023 Apr 4;13(7):1276. doi: 10.3390/nano13071276.
Tungsten disulfide (WS) was prepared from W metal and WO by ion beam sputtering and sulfurization in a different number of layers, including monolayer, bilayer, six-layer, and nine-layer. To obtain better crystallinity, the nine-layer of WS was also prepared from W metal and sulfurized in a furnace at different temperatures (800, 850, 900, and 950 °C). X-ray diffraction revealed that WS has a 2-H crystal structure and the crystallinity improved with increasing sulfurization temperature, while the crystallinity of WS sulfurized from WO (WS-WO) is better than that sulfurized from W-metal (WS-W). Raman spectra show that the full-width at half maximum (FWHM) of WS-WO is narrower than that of WS-W. We demonstrate that high-quality monocrystalline WS thin films can be prepared at wafer scale by sulfurization of WO. The photoluminescence of the WS monolayer is strongly enhanced and centered at 1.98 eV. The transmittance of the WS monolayer exceeds 80%, and the measured band gap is 1.9 eV, as shown by ultraviolet-visible-infrared spectroscopy.
通过离子束溅射和硫化，从金属钨和三氧化钨制备了不同层数的二硫化钨（WS），包括单层、双层、六层和九层。为了获得更好的结晶度，还从金属钨制备了九层WS，并在不同温度（800、850、900和950℃）的炉中进行硫化。X射线衍射表明，WS具有2-H晶体结构，结晶度随硫化温度的升高而提高，而由三氧化钨硫化得到的WS（WS-WO）的结晶度优于由金属钨硫化得到的WS（WS-W）。拉曼光谱表明，WS-WO的半高宽（FWHM）比WS-W的窄。我们证明，通过三氧化钨的硫化可以在晶圆规模上制备高质量的单晶WS薄膜。WS单层的光致发光得到强烈增强，中心位于1.98 eV。如紫外-可见-红外光谱所示，WS单层的透过率超过80%，测得的带隙为1.9 eV。
Zotero 插件
