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超越摩尔定律的双门控单分子场效应晶体管。

Dual-gated single-molecule field-effect transistors beyond Moore's law.

作者信息

Meng Linan, Xin Na, Hu Chen, Sabea Hassan Al, Zhang Miao, Jiang Hongyu, Ji Yiru, Jia Chuancheng, Yan Zhuang, Zhang Qinghua, Gu Lin, He Xiaoyan, Selvanathan Pramila, Norel Lucie, Rigaut Stéphane, Guo Hong, Meng Sheng, Guo Xuefeng

机构信息

Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University, 292 Chengfu Road, Haidian District, Beijing, 100871, PR China.

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, PR China.

出版信息

Nat Commun. 2022 Mar 17;13(1):1410. doi: 10.1038/s41467-022-28999-x.

DOI:10.1038/s41467-022-28999-x
PMID:35301285
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8931007/
Abstract

As conventional silicon-based transistors are fast approaching the physical limit, it is essential to seek alternative candidates, which should be compatible with or even replace microelectronics in the future. Here, we report a robust solid-state single-molecule field-effect transistor architecture using graphene source/drain electrodes and a metal back-gate electrode. The transistor is constructed by a single dinuclear ruthenium-diarylethene (Ru-DAE) complex, acting as the conducting channel, connecting covalently with nanogapped graphene electrodes, providing field-effect behaviors with a maximum on/off ratio exceeding three orders of magnitude. Use of ultrathin high-k metal oxides as the dielectric layers is key in successfully achieving such a high performance. Additionally, Ru-DAE preserves its intrinsic photoisomerisation property, which enables a reversible photoswitching function. Both experimental and theoretical results demonstrate these distinct dual-gated behaviors consistently at the single-molecule level, which helps to develop the different technology for creation of practical ultraminiaturised functional electrical circuits beyond Moore's law.

摘要

随着传统的硅基晶体管正迅速接近物理极限,寻找替代材料至关重要,这些材料应在未来与微电子兼容甚至取而代之。在此,我们报道了一种坚固的固态单分子场效应晶体管架构,它使用石墨烯源极/漏极电极和金属背栅电极。该晶体管由单个双核钌 - 二芳基乙烯(Ru - DAE)配合物构成,作为导电通道,与纳米间隙石墨烯电极共价连接,提供最大开/关比超过三个数量级的场效应行为。使用超薄高k金属氧化物作为介电层是成功实现如此高性能的关键。此外,Ru - DAE保留了其固有的光异构化特性,这实现了可逆的光开关功能。实验和理论结果均在单分子水平上一致地证明了这些独特的双门控行为,这有助于开发超越摩尔定律的实用超小型化功能电路的不同技术。

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