Yu Panlong, Yuan Qilin, Zhao Jialong, Zhang Hanzhuang, Ji Wenyu
Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun, Jilin 130023, People's Republic of China.
Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi 530004, People's Republic of China.
J Phys Chem Lett. 2022 Apr 7;13(13):2878-2884. doi: 10.1021/acs.jpclett.2c00604. Epub 2022 Mar 25.
A modified Langevin model has been proposed to study the electronic and excitonic dynamic processes in quantum dot light-emitting diodes (QLEDs), and the electroluminescence onset processes of the QLEDs under different charge-injection conditions have been explored. The simulation results are in good agreement with experimental curves, confirming the feasibility of this model. It is demonstrated that the formation of an exciton on the quantum dots (QDs) with one electron injected first followed by one hole is much more effective than that with the reverse sequence. That is, charging a QD with one electron first is more favorable for device performance enhancement, which is attributed to the low (high) Auger recombination rate of negative (positive) trions of commonly used type I QDs. Additionally, we demonstrate that enough electron injection is one of the prerequisites for high-performance QLEDs based on these type I QDs.
提出了一种改进的朗之万模型来研究量子点发光二极管(QLED)中的电子和激子动力学过程,并探索了不同电荷注入条件下QLED的电致发光起始过程。模拟结果与实验曲线吻合良好,证实了该模型的可行性。结果表明,先注入一个电子再注入一个空穴在量子点(QD)上形成激子的效率比相反顺序高得多。也就是说,先给一个量子点注入一个电子更有利于提高器件性能,这归因于常用I型量子点的负(正)三重态的俄歇复合率低(高)。此外,我们证明了足够的电子注入是以这些I型量子点为基础的高性能QLED的前提条件之一。