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通过自旋界面效应实现分子/Fe GeTe范德华异质结构中的交换偏置

Exchange Bias in Molecule/Fe GeTe van der Waals Heterostructures via Spinterface Effects.

作者信息

Jo Junhyeon, Calavalle Francesco, Martín-García Beatriz, Tezze Daniel, Casanova Fèlix, Chuvilin Andrey, Hueso Luis E, Gobbi Marco

机构信息

CIC nanoGUNE, Donostia-San Sebastian, Basque Country, 20018, Spain.

IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48013, Spain.

出版信息

Adv Mater. 2022 May;34(21):e2200474. doi: 10.1002/adma.202200474. Epub 2022 Apr 27.

Abstract

The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via external stimuli, such as electrostatic gating and proximity effects. Another powerful approach to engineer magnetic materials is molecular functionalization, generating hybrid interfaces with tailored magnetic interactions, called spinterfaces. However, spinterface effects have not yet been explored on layered magnetic materials. Here, the emergence of spinterface effects is demonstrated at the interface between flakes of the prototypical layered magnetic metal Fe GeTe and thin films of Co-phthalocyanine. Magnetotransport measurements show that the molecular layer induces a magnetic exchange bias in Fe GeTe , indicating that the unpaired spins in Co-phthalocyanine develop antiferromagnetic ordering and pin the magnetization reversal of Fe GeTe via magnetic proximity. The effect is strongest for a Fe GeTe thickness of 20 nm, for which the exchange bias field reaches -840 Oe at 10 K and is measurable up to ≈110 K. This value compares very favorably with previous exchange bias fields reported for Fe GeTe in all-inorganic van der Waals heterostructures, demonstrating the potential of molecular functionalization to tailor the magnetism of van der Waals layered materials.

摘要

层状磁性材料的剥落会产生具有超高表面灵敏度的原子级薄片,这使得它们的磁性可通过外部刺激(如静电门控和近邻效应)进行调节。另一种设计磁性材料的有效方法是分子功能化,即产生具有定制磁相互作用的混合界面,称为自旋界面(spinterface)。然而,尚未对层状磁性材料的自旋界面效应进行探索。在此,在典型的层状磁性金属FeGeTe薄片与钴酞菁薄膜之间的界面处证实了自旋界面效应的出现。磁输运测量表明,分子层在FeGeTe中诱导出磁交换偏置,这表明钴酞菁中的未配对自旋产生反铁磁有序,并通过磁近邻效应固定FeGeTe的磁化反转。对于20 nm厚的FeGeTe,这种效应最强,在10 K时交换偏置场达到-840 Oe,并且在高达约110 K时仍可测量。该值与之前报道的全无机范德华异质结构中FeGeTe的交换偏置场相比非常有利,证明了分子功能化在定制范德华层状材料磁性方面的潜力。

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