Zhu Guangqian, Fu Zhaoshu, Liu Tingting, Zhang Qidong, Yang Yintang
School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines (Basel). 2022 Mar 18;13(3):465. doi: 10.3390/mi13030465.
This work presents a high-precision high-order curvature-compensated bandgap voltage reference (BGR) for battery monitoring applications. The collector currents of bipolar junction transistor (BJT) pairs with different ratios and temperature characteristics can cause greater nonlinearities in ΔV. The proposed circuit additionally introduces high-order curvature compensation in the generation of ΔV, such that it presents high-order temperature effects complementary to V. Fabricated using a 0.18 µm BCD process, the proposed BGR generates a 2.5 V reference voltage with a minimum temperature coefficient of 2.65 ppm/°C in the range of -40 to 125 °C. The minimum line sensitivity is 0.023%/V when supply voltage varies from 4.5 to 5.5 V. The BGR circuit area is 382 × 270 μm, and the BMIC area is 2.8 × 2.8 mm.
本文提出了一种用于电池监测应用的高精度高阶曲率补偿带隙基准电压源（BGR）。具有不同比例和温度特性的双极结型晶体管（BJT）对的集电极电流会在ΔV中引起更大的非线性。所提出的电路在ΔV的产生中额外引入了高阶曲率补偿，使其呈现出与V互补的高阶温度效应。采用0.18μm BCD工艺制造，所提出的BGR在-40至125°C范围内产生2.5V参考电压，最小温度系数为2.65ppm/°C。当电源电压在4.5至5.5V之间变化时，最小线路灵敏度为0.023%/V。BGR电路面积为382×270μm，BMIC面积为2.8×2.8mm。
