Hu Yan-Ling, Zhu Yuqin, Ji Huayu, Luo Qingyuan, Fu Ao, Wang Xin, Xu Guiyan, Yang Haobin, Lian Jiqiong, Sun Jingjing, Sun Dongya, Wang Defa
Fujian Provincial Key Laboratory of Functional Materials and Applications, School of Materials Science and Engineering, Xiamen University of Technology, Xiamen 361024, China.
TJU-NIMS International Collaboration Laboratory, School of Materials Science and Engineering, Tianjin University, Nankai District, Tianjin 300072, China.
Nanomaterials (Basel). 2018 Nov 29;8(12):990. doi: 10.3390/nano8120990.
InGaN nanowires (NWs) have drawn great attentions for their applications in optoelectronic and energy conversion devices. Compared to conventional substrates, metal substrates can offer InGaN NW devices with better thermal conductivity, electric conductivity, and mechanic flexibility. In this article, InGaN NWs were successfully grown on the surface of a tantalum (Ta) substrate via vapor-liquid-solid chemical vapor deposition (VLS-CVD), as characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), scanning and transmission electron microscope (STEM), and photoluminescence spectroscopy (PL). It was found that the surface pretreatment of Ta and the composition of metallic catalysts played important roles in the formation of NWs. A dimpled nitrided Ta surface combined with a catalyst of nickle is suitable for VLS-CVD growth of the NWs. The obtained InGaN NWs grew along the [1100] direction with the presence of basal stacking faults and an enriched indium composition of ~3 at.%. The successful VLS-CVD preparation of InGaN nanowires on Ta substrates could pave the way for the large-scale manufacture of optoelectronic devices in a more cost-effective way.
氮化铟镓纳米线（NWs）因其在光电器件和能量转换器件中的应用而备受关注。与传统衬底相比，金属衬底可为氮化铟镓纳米线器件提供更好的热导率、电导率和机械柔韧性。在本文中，通过气-液-固化学气相沉积（VLS-CVD）在钽（Ta）衬底表面成功生长了氮化铟镓纳米线，并用X射线衍射（XRD）、扫描电子显微镜（SEM）、扫描透射电子显微镜（STEM）和光致发光光谱（PL）进行了表征。结果发现，钽的表面预处理和金属催化剂的组成在纳米线的形成中起着重要作用。具有凹坑的氮化钽表面与镍催化剂相结合，适用于纳米线的VLS-CVD生长。所获得的氮化铟镓纳米线沿[1100]方向生长，存在基面堆垛层错，铟成分富集约3原子%。在钽衬底上成功通过VLS-CVD制备氮化铟镓纳米线，可为以更具成本效益的方式大规模制造光电器件铺平道路。
