Yang Jing, Zhao De-Gang, Liu Zong-Shun, Wang Baibin, Zhang Yu-Heng, Zhang Zhen-Zhuo, Chen Ping, Liang Feng
Opt Lett. 2022 Apr 1;47(7):1666-1668. doi: 10.1364/OL.454340.
Temperature characteristics of near-UV laser diodes (LDs) with a lasing wavelength of 384 nm are investigated. The characteristic temperature of threshold current (T) of the UV LDs is low. Thus, the performance of the UV LDs under continuous wave (CW) operation is not as good as under pulsed operation especially at a high injection current. In addition, it is found that self-heating is a key factor for CW characteristics of the UV LDs, where suppression of the self-heating by using thick waveguide layers can increase the critical current of thermal rollover of the UV LD's operation. A high CW output power of 2.0 W is achieved for an InGaN near-UV LD with the n-side down on a sub-mount, whose threshold current density is 1.27 kA/cm and the highest wall plug efficiency (WPE) is approximately 15.9% at an injection current of 1.2 A.
研究了激射波长为384 nm的近紫外激光二极管（LD）的温度特性。紫外LD的阈值电流（T）的特征温度较低。因此，紫外LD在连续波（CW）工作模式下的性能不如在脉冲工作模式下，尤其是在高注入电流时。此外，发现自热是紫外LD连续波特性的关键因素，通过使用厚波导层抑制自热可以提高紫外LD工作的热滚降临界电流。对于倒装在基座上的InGaN近紫外LD，实现了2.0 W的高连续波输出功率，其阈值电流密度为1.27 kA/cm，在1.2 A注入电流下最高壁插效率（WPE）约为15.9%。
