Low threshold current density and high power InGaN-based blue-violet laser diode with an asymmetric waveguide structure.

Performance of InGaN-based blue-violet laser diodes (LD) with different waveguide structure were investigated by simulation and experimental methods. Theoretical calculation demonstrated that threshold current (I) can be reduced and slope efficiency (SE) can be improved by using an asymmetric waveguide structure. Based on the simulation results, a LD with 80-nm-thick InGaN lower waveguide (LWG) and 80-nm-thick GaN upper waveguide (UWG) is fabricated with flip chip package. Under continuous wave (CW) current injection at room temperature, its optical output power (OOP) reaches 4.5 W at an operating current of 3 A and the lasing wavelength of 403 nm. The threshold current density (Jth) is 0.97 kA/cm and the SE is about 1.9 W/A.