Opt Express. 2023 Feb 27;31(5):7839-7849. doi: 10.1364/OE.482715.
Performance of InGaN-based blue-violet laser diodes (LD) with different waveguide structure were investigated by simulation and experimental methods. Theoretical calculation demonstrated that threshold current (I) can be reduced and slope efficiency (SE) can be improved by using an asymmetric waveguide structure. Based on the simulation results, a LD with 80-nm-thick InGaN lower waveguide (LWG) and 80-nm-thick GaN upper waveguide (UWG) is fabricated with flip chip package. Under continuous wave (CW) current injection at room temperature, its optical output power (OOP) reaches 4.5 W at an operating current of 3 A and the lasing wavelength of 403 nm. The threshold current density (Jth) is 0.97 kA/cm and the SE is about 1.9 W/A.
通过模拟和实验方法研究了具有不同波导结构的 InGaN 基蓝紫光激光二极管（LD）的性能。理论计算表明，采用非对称波导结构可以降低阈值电流（I）并提高斜率效率（SE）。基于模拟结果，采用倒装芯片封装工艺制备了具有 80nm 厚 InGaN 下波导（LWG）和 80nm 厚 GaN 上波导（UWG）的 LD。在室温下连续波（CW）电流注入下，其光输出功率（OOP）在 3A 的工作电流下达到 4.5W，激光波长为 403nm。阈值电流密度（Jth）为 0.97kA/cm，斜率效率约为 1.9W/A。
