Feng Sirui, Zheng Zheyang, Cheng Yan, Ng Yat Hon, Song Wenjie, Chen Tao, Zhang Li, Liu Kai, Cheng Kai, Chen Kevin J
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, China.
Research Institute, The Hong Kong University of Science and Technology, Shenzhen Research Institute, Shenzhen, 518057, China.
Adv Mater. 2022 Jun;34(23):e2201169. doi: 10.1002/adma.202201169. Epub 2022 May 4.
A hybrid field-effect transistor (HyFET), superior for power electronic applications, can be created by harnessing the merits of two representative wide-bandgap semiconductors, gallium nitride (GaN) and silicon carbide (SiC). Yet, the incompactness in the epitaxy techniques hinders the development of the HyFET-GaN is usually grown on on-axis foreign substrates including SiC, whereas SiC homoepitaxy prefers off-axis substrates. This work presents a GaN-based heterostructure epitaxially grown on a conventional 4° off-axis 4H-SiC substrate, which manifests its high quality and suitability for constructing GaN-based high-electron-mobility transistors, thereby suggesting a practical approach to realizing HyFETs. In the meanwhile, a distinct two-step biaxial strain-relaxation process is proposed and studied with comprehensive characterizations.
一种在功率电子应用方面具有优势的混合场效应晶体管（HyFET），可以通过利用两种具有代表性的宽带隙半导体——氮化镓（GaN）和碳化硅（SiC）的优点来制造。然而，外延技术的不紧凑阻碍了HyFET的发展——GaN通常生长在包括SiC在内的轴向异质衬底上，而SiC同质外延则更喜欢非轴向衬底。这项工作展示了一种在传统的4°非轴向4H-SiC衬底上外延生长的基于GaN的异质结构，它表现出高质量且适合构建基于GaN的高电子迁移率晶体管，从而提出了一种实现HyFET的实用方法。与此同时，提出并通过全面表征研究了一种独特的两步双轴应变弛豫过程。
