Ma Chao-Tsung, Gu Zhen-Huang
Department of Electrical Engineering, CEECS, National United University, Miaoli 36063, Taiwan.
Micromachines (Basel). 2021 Jan 8;12(1):65. doi: 10.3390/mi12010065.
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switching devices and investigate effective means to safely, efficiently, and reliably utilize the WBG devices. This paper aims to provide engineers in the power engineering field a comprehensive understanding of WBG switching devices' driving requirements, especially for mid- to high-power applications. First, the characteristics and operating principles of WBG switching devices and their commercial products within specific voltage ranges are explored. Next, considerations regarding the design of driving circuits for WBG switching devices are addressed, and commercial drivers designed for WBG switching devices are explored. Lastly, a review on typical papers concerning driving technologies for WBG switching devices in mid- to high-power applications is presented.
基于宽带隙（WBG）材料的开关器件，如氮化镓（GaN）高电子迁移率晶体管（HEMT）和碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET），被认为是替代传统硅（Si）MOSFET用于各种先进功率转换应用的非常有前途的候选者，主要是因为它们能够实现更高的开关频率，同时具有更低的开关和导通损耗。然而，为了充分发挥其优势，了解WBG基开关器件和硅基开关器件之间的内在差异，并研究安全、高效和可靠地使用WBG器件的有效方法至关重要。本文旨在为电力工程领域的工程师提供对WBG开关器件驱动要求的全面理解，特别是针对中高功率应用。首先，探讨了WBG开关器件及其在特定电压范围内的商业产品的特性和工作原理。其次，讨论了WBG开关器件驱动电路设计的相关考虑因素，并探讨了为WBG开关器件设计的商用驱动器。最后，对有关中高功率应用中WBG开关器件驱动技术的典型论文进行了综述。
