Jeong Inho, Cho Kyungjune, Yun Seobin, Shin Jiwon, Kim Jaeyoung, Kim Gyu Tae, Lee Takhee, Chung Seungjun
Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea.
School of Electrical Engineering, Korea University, Seoul 02841, Korea.
ACS Nano. 2022 Apr 26;16(4):6215-6223. doi: 10.1021/acsnano.2c00021. Epub 2022 Apr 4.
Surface charge transfer doping (SCTD) has been regarded as an effective approach to tailor the electrical characteristics of atomically thin transition metal dichalcogenides (TMDs) in a nondestructive manner due to their two-dimensional nature. However, the difficulty of achieving rationally controlled SCTD on TMDs conventional doping methods, such as solution immersion and dopant vaporization, has impeded the realization of practical optoelectronic and electronic devices. Here, we demonstrate controllable SCTD of molybdenum disulfide (MoS) field-effect transistors using inkjet-printed benzyl viologen (BV) as an n-type dopant. By adjusting the BV concentration and the areal coverage of inkjet-printed BV dopants, controllable SCTD results in BV-doped MoS FETs with elaborately tailored electrical performance. Specifically, the suggested solvent system creates well-defined droplets of BV ink having a volume of ∼2 pL, which allows the high spatial selectivity of SCTD onto the MoS channels by depositing the BV dopant on demand. Our inkjet-printed SCTD method provides a feasible solution for achieving controllable doping to modulate the electrical and optical performances of TMD-based devices.
表面电荷转移掺杂（SCTD）因其二维特性，被视为一种以无损方式调整原子级薄过渡金属二硫属化物（TMDs）电学特性的有效方法。然而，在TMDs上实现合理可控的SCTD存在困难，传统的掺杂方法，如溶液浸渍和掺杂剂蒸发，阻碍了实际光电器件和电子器件的实现。在此，我们展示了使用喷墨打印的苄基紫精（BV）作为n型掺杂剂对二硫化钼（MoS₂）场效应晶体管进行可控的SCTD。通过调整BV浓度和喷墨打印的BV掺杂剂的面积覆盖率，可控的SCTD导致具有精心调整电学性能的BV掺杂MoS₂场效应晶体管。具体而言，所建议的溶剂系统产生体积约为2 pL的定义明确的BV墨滴，这通过按需沉积BV掺杂剂实现了SCTD在MoS₂沟道上的高空间选择性。我们的喷墨打印SCTD方法为实现可控掺杂以调节基于TMD的器件的电学和光学性能提供了一种可行的解决方案。
