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用于二硫化钼表面电荷转移掺杂的强电子给体苄基紫精的对流辅助制备

Convection-Flow-Assisted Preparation of a Strong Electron Dopant, Benzyl Viologen, for Surface-Charge Transfer Doping of Molybdenum Disulfide.

作者信息

Matsuyama Keigo, Fukui Akito, Miura Kohei, Ichimiya Hisashi, Aoki Yuki, Yamada Yuki, Ashida Atsushi, Yoshimura Takeshi, Fujimura Norifumi, Kiriya Daisuke

机构信息

Department of Physics and Electronics Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai-shi Osaka 599-8531 Japan.

PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi Saitama 332-0012, Saitama Japan.

出版信息

ChemistryOpen. 2019 Jul 12;8(7):908-914. doi: 10.1002/open.201900169. eCollection 2019 Jul.

Abstract

Transition metal dichalcogenides (TMDCs) have received attention as atomically thin post-silicon semiconducting materials. Tuning the carrier concentrations of the TMDCs is important, but their thin structure requires a non-destructive modulation method. Recently, a surface-charge transfer doping method was developed based on contacting molecules on TMDCs, and the method succeeded in achieving a large modulation of the electronic structures. The successful dopant is a neutral benzyl viologen (BV); however, the problem remains of how to effectively prepare the BV molecules. A reduction process with NaBH in water has been proposed as a preparation method, but the NaBH simultaneously reacts vigorously with the water. Here, a simple method is developed, in which the reaction vial is placed on a hotplate and a fragment of air-stable metal is used instead of NaBH to prepare the BV dopant molecules. The prepared BV molecules show a strong doping ability in terms of achieving a degenerate situation of a TMDC, MoS. A key finding in this preparation method is that a convection flow in the vial effectively transports the produced BV to a collection solvent. This method is simple and safe and facilitates the tuning of the optoelectronic properties of nanomaterials by the easily-handled dopant molecules.

摘要

过渡金属二硫属化物(TMDCs)作为原子级厚度的后硅基半导体材料受到了关注。调节TMDCs的载流子浓度很重要,但其薄结构需要一种非破坏性的调制方法。最近,基于在TMDCs上接触分子开发了一种表面电荷转移掺杂方法,该方法成功实现了电子结构的大幅调制。成功的掺杂剂是中性苄基紫精(BV);然而,如何有效制备BV分子的问题仍然存在。有人提出在水中用硼氢化钠(NaBH)进行还原过程作为一种制备方法,但NaBH会同时与水剧烈反应。在此,开发了一种简单的方法,即将反应瓶放在热板上,并用空气稳定的金属碎片代替NaBH来制备BV掺杂剂分子。所制备的BV分子在实现TMDC,即二硫化钼(MoS)的简并情况方面显示出很强的掺杂能力。这种制备方法的一个关键发现是反应瓶中的对流有效地将产生的BV传输到收集溶剂中。该方法简单安全,便于通过易于处理的掺杂剂分子调节纳米材料的光电性能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bba9/6625110/40f1cf360d29/OPEN-8-908-g001.jpg

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