Ornelas-Cruz Iván, González Israel, Pilo Jorge, Trejo Alejandro, Oviedo-Roa Raúl, Cruz-Irisson Miguel
Instituto Politécnico Nacional, ESIME-Culhuacán, Av. Santa Ana 1000, 04440, Ciudad de México, Mexico.
Instituto Mexicano del Petróleo, Eje Central Lázaro Cárdenas Norte 152, 07730, Ciudad de México, Mexico.
Dalton Trans. 2022 May 3;51(17):6607-6621. doi: 10.1039/d1dt04041c.
The oxidation of Sn(II) to the more stable Sn(IV) degrades the photovoltaic perovskite material CsSnI; however, this problem can be counteracted alkaline-earth (AE) doping. In this work, the electronic properties of CsSnAEI, with = 0 and 0.25, and AE = Mg and Ca, were investigated Density Functional Theory. It is proven that the synthetic reactions of all these perovskites are thermodynamically viable. Besides, a slight strengthening in the metal-halide bonds is found in the Mg-doped perovskite; consequently, it exhibits the greatest bulk modulus. Nevertheless, the opposite occurrs with the Ca-doped perovskite, which has the smallest bulk modulus due to the weakening of its metal-halide bonds. The calculated bandgaps for CsSnI, Mg-doped and Ca-doped perovskites are 1.11, 1.32 and 1.55 eV, respectively, remaining remarkably close to the best photovoltaic-performing value for single-junction solar cells of 1.34 eV. Nevertheless, an indirect bandgap was predicted under Mg-doping. These results support the possibility of implementing AE-doped perovskites as absorber materials in single-junction solar cells, which can deliver higher output voltages than that using CsSnI. Finally, it was found that Sr or Ba doping could result in semiconductors with bandgaps close to 2.0 eV.
将Sn(II)氧化为更稳定的Sn(IV)会使光伏钙钛矿材料CsSnI降解;然而,这个问题可以通过碱土(AE)掺杂来解决。在这项工作中,利用密度泛函理论研究了 = 0和0.25且AE = Mg和Ca时CsSnAEI的电子性质。结果表明,所有这些钙钛矿的合成反应在热力学上都是可行的。此外,在Mg掺杂的钙钛矿中发现金属卤化物键略有增强;因此,它表现出最大的体积模量。然而,Ca掺杂的钙钛矿情况相反,由于其金属卤化物键的减弱,它具有最小的体积模量。计算得到的CsSnI、Mg掺杂和Ca掺杂钙钛矿的带隙分别为1.11、1.32和1.55 eV,与单结太阳能电池的最佳光伏性能值1.34 eV非常接近。然而,预测Mg掺杂下为间接带隙。这些结果支持了将AE掺杂的钙钛矿用作单结太阳能电池吸收材料的可能性,其输出电压比使用CsSnI时更高。最后,发现Sr或Ba掺杂会导致带隙接近2.0 eV的半导体。