Shang Xiangjun, Li Shulun, Liu Hanqing, Su Xiangbin, Hao Huiming, Dai Deyan, Li Xiaoming, Li Yuanyuan, Gao Yuanfei, Dou Xiuming, Ni Haiqiao, Niu Zhichuan
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Beijing Academy of Quantum Information Sciences, Beijing 100193, China.
Nanomaterials (Basel). 2022 Apr 5;12(7):1219. doi: 10.3390/nano12071219.
In this work, we develop single-mode fiber devices of an InAs/GaAs quantum dot (QD) by bonding a fiber array with large smooth facet, small core, and small numerical aperture to QDs in a distributed Bragg reflector planar cavity with vertical light extraction that prove mode overlap and efficient output for plug-and-play stable use and extensive study. Modulated Si doping as electron reservoir builds electric field and level tunnel coupling to reduce fine-structure splitting (FSS) and populate dominant XX and higher excitons XX and XXX. Epoxy package thermal stress induces light hole (lh) with various behaviors related to the donor field: lh h confined with more anisotropy shows an additional X line (its space to the traditional X lines reflects the field intensity) and larger FSS; lh h delocalized to wetting layer shows a fast h-h decay; lh h confined shows D symmetric higher excitons with slow h-h decay and more confined h to raise h-h Coulomb interaction.
在这项工作中，我们通过将具有大光滑刻面、小芯径和小数值孔径的光纤阵列与具有垂直光提取功能的分布式布拉格反射器平面腔中的量子点键合，开发了一种InAs/GaAs量子点（QD）的单模光纤器件，该器件证明了模式重叠以及用于即插即用稳定使用和广泛研究的高效输出。作为电子库的调制硅掺杂建立了电场和能级隧道耦合，以减少精细结构分裂（FSS）并填充占主导地位的XX和更高的激子XX和XXX。环氧树脂封装热应力会诱导出具有与施主场相关的各种行为的轻空穴（lh）：具有更多各向异性的受限lh h显示出一条额外的X线（其与传统X线的间距反映了场强）和更大的FSS；离域到润湿层的lh h显示出快速的h-h衰变；受限的lh h显示出具有缓慢h-h衰变和更多受限h的D对称更高激子，以增强h-h库仑相互作用。
