Li Shulun, Chen Yao, Shang Xiangjun, Yu Ying, Yang Jiawei, Huang Junhui, Su Xiangbin, Shen Jiaxin, Sun Baoquan, Ni Haiqiao, Su Xingliang, Wang Kaiyou, Niu Zhichuan
State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083, China.
Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing, 100049, China.
Nanoscale Res Lett. 2020 Jul 9;15(1):145. doi: 10.1186/s11671-020-03358-1.
We proposed a precise calibration process of Al GaAs/GaAs DBR micropillar cavity to match the single InAs/GaAs quantum dot (QD) exciton emission and achieve cavity mode resonance and a great enhancement of QD photoluminescence (PL) intensity. Light-matter interaction of single QD in DBR micropillar cavity (Q ∼ 3800) under weak coupling regime was investigated by temperature-tuned PL spectra; a pronounced enhancement (14.6-fold) of QD exciton emission was observed on resonance. The second-order autocorrelation measurement shows g(0)=0.070, and the estimated net count rate before the first objective lens reaches 1.6×10 counts/s under continuous wave excitation, indicating highly pure single-photon emission at high count rates.
我们提出了一种精确校准Al GaAs/GaAs DBR微柱腔的过程,以匹配单个InAs/GaAs量子点(QD)的激子发射,实现腔模共振并大幅增强量子点的光致发光(PL)强度。通过温度调谐PL光谱研究了弱耦合 regime 下DBR微柱腔中单个量子点的光与物质相互作用(Q ∼ 3800);在共振时观察到量子点激子发射有明显增强(14.6倍)。二阶自相关测量显示g(0)=0.070,并且在连续波激发下,第一个物镜之前的估计净计数率达到1.6×10 counts/s,表明在高计数率下有高度纯净的单光子发射。