Zhang Ningxia, Li Xiaodan, Ruan Shihao, Chen Xiong, Li Shenghao, Hu Taotao
College of Science, University of Shanghai for Science and Technology, Shanghai 200093, China.
School of Physics, Northeast Normal University, Changchun 130024, China.
Materials (Basel). 2022 Mar 27;15(7):2462. doi: 10.3390/ma15072462.
SnP has a great prospect in electronic and thermoelectric device applications due to its moderate band gap, high carrier mobility, absorption coefficients, and dynamical and chemical stability. Doping in two-dimensional semiconductors is likely to display various anomalous behaviors when compared to doping in bulk semiconductors due to the significant electron confinement effect. By introducing foreign atoms from group III to VI, we can successfully modify the electronic properties of two-dimensional SnP. The interaction mechanism between the dopants and atoms nearby is also different from the type of doped atom. Both SnBP and SnNP systems are indirect bandgap semiconductors, while the SnAlP, SnGaP, SnPP and SnAsP systems are metallic due to the contribution of doped atoms intersecting the Fermi level. For all substitutionally doped 2D SnP systems considered here, all metallic systems are nonmagnetic states. In addition, monolayer SnXP and SnPY may have long-range and local magnetic moments, respectively, because of the degree of hybridization between the dopant and its adjacent atoms. The results complement theoretical knowledge and reveal prospective applications of SnP-based electrical nanodevices for the future.
由于具有适度的带隙、高载流子迁移率、吸收系数以及动力学和化学稳定性，SnP在电子和热电设备应用方面具有广阔前景。与体相半导体中的掺杂相比，二维半导体中的掺杂由于显著的电子限制效应可能会表现出各种异常行为。通过引入III族到VI族的外来原子，我们可以成功改变二维SnP的电子性质。掺杂剂与附近原子之间的相互作用机制也因掺杂原子类型而异。SnBP和SnNP体系都是间接带隙半导体，而SnAlP、SnGaP、SnPP和SnAsP体系由于掺杂原子与费米能级相交的贡献而呈金属性。对于这里考虑的所有替代掺杂二维SnP体系，所有金属体系均为非磁性状态。此外，单层SnXP和SnPY可能分别具有长程和局域磁矩，这是由于掺杂剂与其相邻原子之间的杂化程度所致。这些结果补充了理论知识，并揭示了基于SnP的电纳米器件未来的潜在应用。
