Liu Liming, Li Wuhui, Sun Haoliang, Wang Guangxin
School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, China.
Luoyang Key Laboratory of High Purity Materials and Sputtering Targets, Henan University of Science and Technology, Luoyang 471003, China.
Materials (Basel). 2022 Apr 5;15(7):2661. doi: 10.3390/ma15072661.
Three titanium (Ti) targets with different purities were used to prepare Ti films on polyimide substrates by DC magnetron sputtering. The microstructures of Ti films were characterized by a metallographic microscope, X-ray diffractometer, field emission scanning electron microscope and three-dimensional surface topography instrument. In this study, we investigated the effects of Ti target purity and microstructure on film deposition rate, surface roughness, microstructure and resistivity. The results show that the deposition rate increased with increasing Ti target purity. Ti film deposited by the high-purity (99.999%) Ti target has fewer surface particles with smaller size, lower surface roughness and lower resistivity when compared to that prepared by the Ti target of low purity (99.7%). The surface roughness of Ti film prepared by the high-purity Ti target was Sa = 121 nm, the deposition rate was 16.3 nm/min and the resistivity was 6.9 × 10 Ω·m. For Ti targets of the same purity, the performance of Ti film prepared by a target with equiaxed α-phase grains is better than that of Ti film prepared by a target with twins and β-phase grains.
使用三种不同纯度的钛（Ti）靶材，通过直流磁控溅射在聚酰亚胺衬底上制备Ti薄膜。采用金相显微镜、X射线衍射仪、场发射扫描电子显微镜和三维表面形貌仪对Ti薄膜的微观结构进行表征。在本研究中，我们研究了Ti靶材纯度和微观结构对薄膜沉积速率、表面粗糙度、微观结构和电阻率的影响。结果表明，沉积速率随Ti靶材纯度的增加而提高。与由低纯度（99.7%）Ti靶制备的Ti薄膜相比，由高纯度（99.999%）Ti靶沉积的Ti薄膜表面颗粒更少、尺寸更小、表面粗糙度更低且电阻率更低。由高纯度Ti靶制备的Ti薄膜表面粗糙度为Sa = 121 nm，沉积速率为16.3 nm/min，电阻率为6.9×10Ω·m。对于相同纯度的Ti靶材，由具有等轴α相晶粒的靶制备的Ti薄膜性能优于由具有孪晶和β相晶粒的靶制备的Ti薄膜。
