Sugama Yuki, Watanabe Yoshiaki, Kuroda Rihito, Yamamoto Masahiro, Goto Tetsuya, Yasuda Toshiro, Hamori Hiroshi, Kuriyama Naoya, Sugawa Shigetoshi
Graduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Miyagi, Japan.
New Industry Creation Hatchery Center, Tohoku University, 6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Miyagi, Japan.
Sensors (Basel). 2022 Apr 4;22(7):2770. doi: 10.3390/s22072770.
This paper presents newly developed two high-precision CMOS proximity capacitance image sensors: Chip A with 12 μm pitch pixels with a large detection area of 1.68 cm; Chip B with 2.8 μm pitch 1.8 M pixels for a higher resolution. Both fabricated chips achieved a capacitance detection precision of less than 100 zF (10 F) at an input voltage of 20 V and less than 10 zF (10 F) at 300 V due to the noise cancelling technique. Furthermore, by using multiple input pulse amplitudes, a capacitance detection dynamic range of up to 123 dB was achieved. The spatial resolution improvement was confirmed by the experimentally obtained modulation transfer function for Chip B with various line and space pattens. The examples of capacitance imaging using the fabricated chips were also demonstrated.
本文介绍了新开发的两款高精度CMOS接近电容图像传感器：芯片A，像素间距为12μm，检测面积大，为1.68平方厘米；芯片B，像素间距为2.8μm，有180万个像素，分辨率更高。由于采用了噪声消除技术，两款制成的芯片在输入电压为20V时电容检测精度小于100zF（10⁻¹⁵F），在300V时小于10zF（10⁻¹⁵F）。此外，通过使用多个输入脉冲幅度，实现了高达123dB的电容检测动态范围。通过实验获得的芯片B在各种线距和间距图案下的调制传递函数，证实了空间分辨率的提高。还展示了使用制成芯片进行电容成像的示例。
