高掺杂硅金属氧化物半导体结构中电荷俘获诱导的滞后效应

Charge-Trapping-Induced Hysteresis Effects in Highly Doped Silicon Metal-Oxide-Semiconductor Structures.

作者信息

Wiśniewski Piotr, Majkusiak Bogdan

机构信息

Centre for Advanced Materials and Technologies CEZAMAT, Warsaw University of Technology, 02-822 Warsaw, Poland.

Center for Terahertz Research and Applications (CENTERA), Institute of High-Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland.

出版信息

Materials (Basel). 2022 Apr 8;15(8):2733. doi: 10.3390/ma15082733.

DOI:10.3390/ma15082733

PMID:35454426

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9029991/

Abstract

It is shown that a simple metal-oxide-semiconductor (MOS) structure with highly doped silicon substrate can exhibit current-voltage hysteresis effects related to sudden rises and drops in the flowing electric current. Experimental current-voltage characteristics of Al-SiO-(n++Si) structures are presented and discussed. Their analysis shows that the ohmic and shallow traps assisted space-charge limited conduction (SCLC) are the dominating transport mechanisms. Sudden rises and drops in the flowing current, leading to the current-voltage hysteresis effects, are attributed to tunneling through deep traps in the oxide. Based on inelastic electron tunneling spectroscopy (IETS), the energy levels of the deep traps and their position in the oxide are evaluated.

摘要

结果表明，具有高掺杂硅衬底的简单金属氧化物半导体（MOS）结构可表现出与流动电流的突然上升和下降相关的电流 - 电压滞后效应。给出并讨论了Al - SiO - (n++Si)结构的实验电流 - 电压特性。分析表明，欧姆传导和浅陷阱辅助的空间电荷限制传导（SCLC）是主要的输运机制。导致电流 - 电压滞后效应的流动电流的突然上升和下降归因于通过氧化物中深陷阱的隧穿。基于非弹性电子隧穿谱（IETS），评估了深陷阱的能级及其在氧化物中的位置。