Yale University, New Haven, CT 06520-8284, USA.
Adv Mater. 2010 Jul 20;22(26-27):2962-8. doi: 10.1002/adma.200904311.
A broad range of materials is currently being studied for possible use as the insulating layer in next generation metal-oxide-semiconductor transistors. Inelastic electron tunneling spectroscopy (IETS) has become a powerful tool to characterize both the structural and electrical properties of the resulting device structures made from these materials. IETS can address issues related to reactions and intermixing at interfaces, as well as properties related to carrier mobility, such as phonon modes and charge traps, for structures that are difficult to characterize accurately by other techniques.
目前，人们正在研究广泛的材料，以期将其用作下一代金属氧化物半导体晶体管的绝缘层。非弹性电子隧道谱（IETS）已成为一种强大的工具，可用于表征这些材料制成的器件结构的结构和电学性能。IETS 可以解决与界面反应和混合有关的问题，以及与载流子迁移率有关的特性，例如声子模式和电荷陷阱，对于其他技术难以准确表征的结构。
