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用于空间和高能物理应用的单光子雪崩二极管的辐射硬度研究。

Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications.

作者信息

Wu Ming-Lo, Ripiccini Emanuele, Kizilkan Ekin, Gramuglia Francesco, Keshavarzian Pouyan, Fenoglio Carlo Alberto, Morimoto Kazuhiro, Charbon Edoardo

机构信息

AQUA Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 2002 Neuchâtel, Switzerland.

Canon Inc., Kawasaki 212-8602, Japan.

出版信息

Sensors (Basel). 2022 Apr 11;22(8):2919. doi: 10.3390/s22082919.

DOI:10.3390/s22082919
PMID:35458904
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9025377/
Abstract

The radiation hardness of 180 nm complementary metal-oxide-semiconductor (CMOS) and 55 nm bipolar-CMOS-double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV and 100 MeV protons up to a displacement damage dose of 1 PeV/g. It is found that the dark count rate (DCR) levels are dependent on the number and the type of defects created. A new stepwise increase in the DCR is presented. Afterpulsing was found to be a significant contributor to the observed DCR increase. A new model for DCR increase prediction is proposed considering afterpulsing. Most of the samples under test retain reasonable DCR levels after irradiation, showing high tolerance to ionizing and displacement damage caused by protons. Following irradiation, self-healing was observed at room temperature. Furthermore, high-temperature annealing shows potential for accelerating recovery. Overall, the results show the suitability of SPADs as optical detectors for long-term space missions or as detectors for high-energy particles.

摘要

利用能量为10兆电子伏和100兆电子伏的质子，对180纳米互补金属氧化物半导体（CMOS）和55纳米双极CMOS双扩散金属氧化物半导体单光子雪崩二极管（SPAD）的抗辐射能力进行了研究，位移损伤剂量高达1皮电子伏/克。研究发现，暗计数率（DCR）水平取决于所产生缺陷的数量和类型。提出了DCR的一种新的逐步增加情况。发现后脉冲是观察到的DCR增加的一个重要因素。考虑后脉冲，提出了一种DCR增加预测的新模型。大多数被测样品在辐照后保持合理的DCR水平，对质子引起的电离和位移损伤表现出高耐受性。辐照后，在室温下观察到自愈现象。此外，高温退火显示出加速恢复的潜力。总体而言，结果表明SPAD作为长期太空任务的光学探测器或高能粒子探测器是合适的。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/d9e7f947a10d/sensors-22-02919-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/30c8e0a9f8e3/sensors-22-02919-g001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/73e8ea943188/sensors-22-02919-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/4c93cad9f7a7/sensors-22-02919-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/79e0dcd5f103/sensors-22-02919-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/9d729573c810/sensors-22-02919-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/fa31aedbb843/sensors-22-02919-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/e2b2ec32af28/sensors-22-02919-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/c3e54a552f5c/sensors-22-02919-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/136cffe689e9/sensors-22-02919-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/f90055dbdf52/sensors-22-02919-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/d9e7f947a10d/sensors-22-02919-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/30c8e0a9f8e3/sensors-22-02919-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/88f683da3b54/sensors-22-02919-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/c3db8cb4afdb/sensors-22-02919-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/73e8ea943188/sensors-22-02919-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/4c93cad9f7a7/sensors-22-02919-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/79e0dcd5f103/sensors-22-02919-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/9d729573c810/sensors-22-02919-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/fa31aedbb843/sensors-22-02919-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/e2b2ec32af28/sensors-22-02919-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/c3e54a552f5c/sensors-22-02919-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/136cffe689e9/sensors-22-02919-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/f90055dbdf52/sensors-22-02919-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbb9/9025377/d9e7f947a10d/sensors-22-02919-g013.jpg

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Fluorescence lifetime imaging with a megapixel SPAD camera and neural network lifetime estimation.使用百万像素 SPAD 相机的荧光寿命成像和神经网络寿命估计。
Sci Rep. 2020 Dec 2;10(1):20986. doi: 10.1038/s41598-020-77737-0.
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