Xiang Yuluan, Cao Hengzhen, Liu Chaoyue, Dai Daoxin
Opt Express. 2022 Mar 28;30(7):11288-11297. doi: 10.1364/OE.450618.
A high-performance waveguide Ge/Si avalanche photodiode operating at the O-band (1310 nm) is designed with a Ge/Si ridge waveguide defined by two shallow trenches in the active region and fabricated with simplified processes. The device shows a high primary responsivity of 0.96 A/W at the unit-gain voltage of -7.5 V. It has a large 3-dB bandwidth of >27 GHz and a low dark current of 1.8 µA at a reverse bias voltage of -13 V. When the present Ge/Si APD is used for receiving 25 Gbps data, the eye-diagram is open even for an optical power as low as -18 dBm. Furthermore, 50 Gbps data receiving is also demonstrated with an input optical power of -15 dBm, showing the great potential of the present Ge/Si APD for the application in future high-speed data transmission systems.
设计了一种在O波段（1310纳米）工作的高性能波导锗/硅雪崩光电二极管，其有源区由两条浅沟槽定义的锗/硅脊形波导，并采用简化工艺制造。该器件在-7.5V的单位增益电压下显示出0.96A/W的高初级响应度。它具有大于27GHz的大3dB带宽，在-13V的反向偏置电压下暗电流低至1.8μA。当目前的锗/硅雪崩光电二极管用于接收25Gbps数据时，即使光功率低至-18dBm，眼图也是张开的。此外，还展示了在-15dBm的输入光功率下接收50Gbps数据的情况，表明目前的锗/硅雪崩光电二极管在未来高速数据传输系统中的应用具有巨大潜力。
