Pang Yaqing, Liu Zhi, Zhu Yupeng, Liu Xiangquan, Zhang Diandian, Niu Chaoqun, Li Mingming, Zheng Jun, Zuo Yuhua, Cheng Buwen
Opt Lett. 2022 Sep 1;47(17):4463-4466. doi: 10.1364/OL.466206.
A high-performance waveguide-coupled lateral avalanche photodetector (APD) is experimentally demonstrated without silicon epitaxy and charge layer ion implantation. At the wavelength of 1550 nm, it shows a high responsivity of 48 A/W and a gain-bandwidth product (GBP) of 360 GHz. Wide-open eye diagrams at 25 Gbps can be observed at various avalanche gains. These outstanding performances indicate the proposed APD has great potential in high-speed optical transceivers for optical links.
实验展示了一种无需硅外延和电荷层离子注入的高性能波导耦合横向雪崩光电探测器（APD）。在1550 nm波长下，它显示出48 A/W的高响应度和360 GHz的增益带宽积（GBP）。在各种雪崩增益下都能观察到25 Gbps时的清晰眼图。这些出色的性能表明，所提出的APD在用于光链路的高速光收发器中具有巨大潜力。
