Liu Daoqun, Zhang Peng, Tang Bo, Wang Wenwu, Li Zhihua
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
School of Electronic Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Micromachines (Basel). 2022 Apr 19;13(5):649. doi: 10.3390/mi13050649.
High-performance waveguide-integrated Ge/Si APDs in separate absorption, charge, and multiplication (SACM) schemes have been exploited to facilitate energy-efficient optical communication and interconnects. However, the charge layer design is complex and time-consuming. A waveguide-integrated Ge/Si avalanche photodetector (APD) is proposed in a separate absorption and multiplication (SAM) configuration. The device can work at low voltage and high speed with a lateral multiplication region without complexity of the charge layer. The proposed device is implemented by the complementary metal-oxide-semiconductor (CMOS) process in the 8-inch Si photonics platform. The device has a low breakdown voltage of 12 V and shows high responsivity of 15.1 A/W at 1550 nm wavelength under optical power of -22.49 dBm, corresponding to a multiplication gain of 18.1. Moreover, an opto-electrical bandwidth of 20.7 GHz is measured at 10.6 V. The high-speed performance at low voltage shows a great potential to implement high-energy-efficient Si optical communications and interconnections.
采用单独吸收、电荷和倍增（SACM）方案的高性能波导集成锗/硅雪崩光电二极管（APD）已被用于促进高能效光通信和互连。然而，电荷层设计复杂且耗时。本文提出了一种采用单独吸收和倍增（SAM）结构的波导集成锗/硅雪崩光电探测器（APD）。该器件可在低电压和高速下工作，具有横向倍增区域，无需电荷层的复杂性。所提出的器件是在8英寸硅光子平台上通过互补金属氧化物半导体（CMOS）工艺实现的。该器件的低击穿电压为12V，在-22.49dBm光功率下，1550nm波长处的响应度高达15.1A/W，对应倍增增益为18.1。此外，在10.6V电压下测得的光电带宽为20.7GHz。低电压下的高速性能显示出实现高能效硅光通信和互连的巨大潜力。
