Sun Laixi, Shao Ting, Zhou Xinda, Li Weihua, Li Fenfei, Ye Xin, Huang Jin, Chen Shufan, Li Bo, Yang Liming, Zheng Wanguo
Research Center of Laser Fusion, China Academy of Engineering Physics Mianyang 621900 P. R. China
School of Materials Science and Engineering, Southwest University of Science and Technology Mianyang 621010 P. R. China.
RSC Adv. 2021 Sep 1;11(47):29323-29332. doi: 10.1039/d1ra04174f.
The optical performance of fused silica optics used in high-power lasers is known to depend not only on their surface damage resistance, but also on their surface quality. Previous studies have shown that good fused silica damage performance and surface quality can be achieved by the use of reactive ion etching (RIE), followed by HF-based wet shallow etching (3 μm). In this study, two kinds of HF-based etchants (aqueous HF and HF/NHF solutions) were employed to investigate the effect of HF-based etching on the optical performance of reactive-ion-etched fused silica surfaces at various HF-based shallow etching depths. The results showed that the addition of NHF to HF solution makes it possible to produce a high-quality optical surface with a high laser-induced damage threshold, which is strongly associated with the surface roughness and fluorescence defect density. Additionally, changing the HF-based etching depth over the range from 1 μm to 3 μm can affect the surface damage resistance and absorption performance of RIE-treated fused silica. The light-scattering results indicate that the point defect density plays an important role in the determination of the HF-based etching depth. Understanding these trends can enable the advantages of the combined technique of RIE and HF-based etching during the fabrication of high-quality fused silica optics.
众所周知,用于高功率激光器的熔融石英光学元件的光学性能不仅取决于其抗表面损伤能力,还取决于其表面质量。先前的研究表明,通过使用反应离子蚀刻(RIE),然后进行基于HF的湿法浅蚀刻(3μm),可以实现良好的熔融石英损伤性能和表面质量。在本研究中,采用了两种基于HF的蚀刻剂(HF水溶液和HF/NHF溶液),以研究在不同基于HF的浅蚀刻深度下,基于HF的蚀刻对反应离子蚀刻的熔融石英表面光学性能的影响。结果表明,在HF溶液中添加NHF可以产生具有高激光诱导损伤阈值的高质量光学表面,这与表面粗糙度和荧光缺陷密度密切相关。此外,将基于HF的蚀刻深度在1μm至3μm范围内变化会影响RIE处理的熔融石英的抗表面损伤能力和吸收性能。光散射结果表明,点缺陷密度在确定基于HF的蚀刻深度方面起着重要作用。了解这些趋势有助于在制造高质量熔融石英光学元件时发挥RIE和基于HF的蚀刻相结合技术的优势。